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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N4150UR-1DIODE GEN PURP 50V 200MA DO213AA Microchip Technology |
3,883 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/231 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -65°C ~ 175°C | 1 V @ 200 mA |
|
UES1103DIODE GEN PURP 150V 2.5A AXIAL Microchip Technology |
3,900 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 150 V | 150 V | 2.5A | 175°C (Max) | 975 mV @ 2 A | |
|
PR1002G-TDIODE GEN PURP 100V 1A DO41 Diodes Incorporated |
3,124 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A | |
|
FR70DR02DIODE GEN PURP REV 200V 70A DO5 GeneSiC Semiconductor |
2,994 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 100 V | 200 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
VS-85HFL100S05DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 1000 V | 1000 V | 85A | -40°C ~ 125°C | - | |
|
GPP20G-E3/73DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,239 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
|
VS-85HFL60S05DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,427 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
|
GPP20K-E3/73DIODE GEN PURP 800V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,419 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
IDWD40G120C5XKSA1SIC SCHOTTKY 1200V 40A TO247-2 Infineon Technologies |
3,814 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2592pF @ 1V, 1MHz | 0 ns | 332 µA @ 1200 V | 1200 V | 110A (DC) | -55°C ~ 175°C | 1.65 V @ 40 A |
|
SR010 R0GDIODE SCHOTTKY 100V 500MA DO204 Taiwan Semiconductor Corporation |
3,813 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 65pF @ 4V, 1MHz | - | 100 µA @ 100 V | 100 V | 500mA | -55°C ~ 150°C | 850 mV @ 500 mA | |
|
VS-20ETF04-M3DIODE GEN PURP 400V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,324 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
DMA150E1600NADIODE GP 1.6KV 150A SOT227B IXYS |
3,621 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | 60pF @ 400V, 1MHz | - | 200 µA @ 1600 V | 1600 V | 150A | -40°C ~ 150°C | 1.15 V @ 150 A | |
|
|
SR110 R0GDIODE SCHOTTKY 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,668 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 850 mV @ 1 A | |
|
SICR40650WTTBSIC SCHOTTKY 40A, 650V TO-247AD SMC Diode Solutions |
3,761 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 650pF @ 0V, 1MHz | - | 300 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 2 V @ 20 A | |
|
UES1303DIODE GEN PURP 150V 6A AXIAL Microchip Technology |
2,476 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 150 V | 150 V | 6A | 175°C (Max) | 925 mV @ 6 A | |
|
B0530WSQ-13-FDIODE SCHOTTKY 30V 500MA SOD323 Diodes Incorporated |
2,376 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 58pF @ 0V, 1MHz | - | 500 µA @ 30 V | 30 V | 500mA | -40°C ~ 125°C | 450 mV @ 500 mA |
|
|
JANTXV1N5618D MET 1A STD 600V HRV Semtech Corporation |
3,635 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
DSA300I45NADIODE SCHOTTKY 45V 300A SOT227B IXYS |
2,452 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 16500pF @ 5V, 1MHz | - | 3 mA @ 45 V | 45 V | 300A | - | 840 mV @ 300 A | |
|
|
JAN1N5551D MET 3A STD 400V Semtech Corporation |
2,204 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 92pF @ 5V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 5A | - | 1 V @ 3 A |
|
S2KDF-13DIODE GEN PURP 800V 2A DFLAT Diodes Incorporated |
3,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
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