Sensores ópticos - Fotodiodos

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus Wavelength Color-Enhanced SpectralRange DiodeType Responsivity@nm ResponseTime Voltage-DCReverse(Vr)(Max) Current-Dark(Typ) ActiveArea ViewingAngle OperatingTemperature MountingType
KPDE030-H8-B

KPDE030-H8-B

INGAAS PHOTODIODE 300UM 900-170

CEL
3,724 -

RFQ

KPDE030-H8-B

Ficha técnica

Bag - Active - - 400nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 20 V 100pA 300µm Dia - -40°C ~ 85°C Through Hole
KPDE086S-H8-B

KPDE086S-H8-B

INGAAS PHOTODIODE 860X860UM 900-

CEL
3,416 -

RFQ

KPDE086S-H8-B

Ficha técnica

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 20 V 1nA 0.86mm² - -40°C ~ 85°C Through Hole
KPDA050P-H8-B

KPDA050P-H8-B

SI APD AVALANCHE PHOTODIODE 500U

CEL
3,624 -

RFQ

KPDA050P-H8-B

Ficha técnica

Bag - Active 780nm - 400nm ~ 1000nm Avalanche 0.45 A/W @ 850nm - 200 V 20pA 0.5mm Dia - -40°C ~ 85°C Through Hole
KPDE150-H45-B

KPDE150-H45-B

INGAAS PHOTODIODE 1500UM 900-17

CEL
2,786 -

RFQ

KPDE150-H45-B

Ficha técnica

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 2 V 1nA 1.5mm Dia - -20°C ~ 70°C Through Hole
KPDA100P-H8-B

KPDA100P-H8-B

SI APD AVALANCHE PHOTODIODE 1000

CEL
3,341 -

RFQ

KPDA100P-H8-B

Ficha técnica

Bag - Active 780nm - 400nm ~ 1000nm Avalanche 0.45 A/W @ 850nm - 200 V 30pA 1mm Dia - -40°C ~ 85°C Through Hole
KPMC29-B

KPMC29-B

INGAAS PHOTODIODE 2.2X2.2MM SI;

CEL
2,587 -

RFQ

KPMC29-B

Ficha técnica

Bag - Active - - 400nm ~ 1700nm - 0.6 A/W @ 850nm, 0.8 A/W @ 1310nm - 10 V 2nA - - -20°C ~ 80°C Surface Mount
KPDA020P-H8-B

KPDA020P-H8-B

SI APD AVALANCHE PHOTODIODE 200U

CEL
3,712 -

RFQ

KPDA020P-H8-B

Ficha técnica

Bag - Active 780nm - 400nm ~ 1000nm Avalanche 0.45 A/W @ 850nm - 200 V 10pA 0.2mm Dia - -40°C ~ 85°C Through Hole
KPDE300-H53-B

KPDE300-H53-B

INGAAS PHOTODIODE 3000UM 900-17

CEL
2,957 -

RFQ

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 2 V 2nA 3.00mm Dia - -20°C ~ 70°C Through Hole
KPDEA005-56F-B

KPDEA005-56F-B

INGAAS APD 55UM 900-1700NM

CEL
3,056 -

RFQ

Bag - Active - - 900nm ~ 1700nm Avalanche 0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm - 55 V 10nA 0.06mm Dia - -40°C ~ 85°C Through Hole
KPDEA005B-56F-B

KPDEA005B-56F-B

INGAAS APD 50UM 900-1700NM

CEL
2,408 -

RFQ

KPDEA005B-56F-B

Ficha técnica

Bag - Active - - 900nm ~ 1700nm Avalanche 0.95 A/W @ 1310nm, 1.05 A/W @ 1550nm - 55 V 20nA 50µm Dia - -40°C ~ 85°C Through Hole
KPDEA007-56F-B

KPDEA007-56F-B

INGAAS APD 75UM 900-1700NM

CEL
3,866 -

RFQ

Bag - Active - - 900nm ~ 1700nm Avalanche 0.9 A/W @ 1310nm, 1.05 A/W @ 1550nm - 55 V 15nA 0.08mm Dia - -40°C ~ 85°C Through Hole
KPDE086S-H54P-B

KPDE086S-H54P-B

INGAAS, INAS PHOTODIODE W/THEMO-

CEL
3,350 -

RFQ

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 20 V 1nA 0.86mm² - -40°C ~ 70°C Through Hole
KPDE086S-H85P-B

KPDE086S-H85P-B

INGAAS, INAS PD W/THEMO-ELECTRIC

CEL
3,214 -

RFQ

Bag - Active - - 900nm ~ 1700nm - 0.9 A/W @ 1310nm, 1 A/W @ 1550nm - 20 V 1nA 0.86mm² - -40°C ~ 70°C Through Hole
KPDS100-H54PS-B

KPDS100-H54PS-B

INGAAS, INAS PD W/LONG CUTOFF WA

CEL
2,128 -

RFQ

Bag - Active 3300nm - - - 1.2 A/W @ 3300nm - 500 mV - 1.00mm Dia - -40°C ~ 60°C Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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