Módulos de Driver de Potência

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus Type Configuration Current Voltage Voltage-Isolation MountingType
MSCSM120SKM11CT3AG

MSCSM120SKM11CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
3,579 -

RFQ

MSCSM120SKM11CT3AG

Ficha técnica

Tube - Active MOSFET 1 Phase 254 A 1.2 kV 4000Vrms Chassis Mount
MSCSM70TAM05TPAG

MSCSM70TAM05TPAG

PM-MOSFET-SIC~-SP6P

Microchip Technology
2,793 -

RFQ

MSCSM70TAM05TPAG

Ficha técnica

Tube - Active MOSFET 3 Phase Inverter 273 A 700 V - Chassis Mount
MSCSM120DAM11CT3AG

MSCSM120DAM11CT3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
3,252 -

RFQ

MSCSM120DAM11CT3AG

Ficha técnica

Tube - Active MOSFET 1 Phase 254 A 1.2 kV 4000Vrms Chassis Mount
APTLGT400A608G

APTLGT400A608G

POWER MOD INTELLIGENT PH LEG LP8

Microchip Technology
3,770 -

RFQ

APTLGT400A608G

Ficha técnica

Bulk - Active IGBT Half Bridge 600 A 600 V 2500Vrms Through Hole
APTLGL325A1208G

APTLGL325A1208G

POWER MOD INTELLIGENT PH LEG LP8

Microchip Technology
2,012 -

RFQ

APTLGL325A1208G

Ficha técnica

Bulk - Active IGBT Half Bridge 420 A 1.2 kV 2500Vrms Through Hole
APTLGT300A1208G

APTLGT300A1208G

MOD IGBT 1200V 440A LP8

Microchip Technology
3,266 -

RFQ

APTLGT300A1208G

Ficha técnica

Bulk - Active IGBT Half Bridge 440 A 1.2 kV 2500Vrms Through Hole
APTLGF350A608G

APTLGF350A608G

POWER MOD INTELLIGENT PH LEG LP8

Microchip Technology
2,338 -

RFQ

APTLGF350A608G

Ficha técnica

Bulk - Obsolete IGBT Half Bridge 430 A 600 V 2500Vrms Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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