Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GPI65015TO

GPI65015TO

GANFET N-CH 650V 15A TO220

GaNPower
3,285 -

RFQ

GPI65015TO

Ficha técnica

Tube - Active N-Channel GaNFET (Gallium Nitride) 650 V 15A 6V - 1.2V @ 3.5mA 3.3 nC @ 6 V +7.5V, -12V 123 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65008DF56

GPI65008DF56

GANFET N-CH 650V 8A DFN5X6

GaNPower
2,672 -

RFQ

GPI65008DF56

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 8A 6V - 1.4V @ 3.5mA 2.1 nC @ 6 V +7.5V, -12V 63 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65010DF56

GPI65010DF56

GANFET N-CH 650V 10A DFN 5X6

GaNPower
118 -

RFQ

GPI65010DF56

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 10A 6V - 1.4V @ 3.5mA 2.6 nC @ 6 V +7.5V, -12V 90 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65015DFN

GPI65015DFN

GANFET N-CH 650V 15A DFN 8X8

GaNPower
155 -

RFQ

GPI65015DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 15A 6V - 1.2V @ 3.5mA 3.3 nC @ 6 V +7.5V, -12V 116 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65030DFN

GPI65030DFN

GANFET N-CH 650V 30A DFN8X8

GaNPower
156 -

RFQ

GPI65030DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 30A 6V - 1.2V @ 3.5mA 5.8 nC @ 6 V +7.5V, -12V 241 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPIHV30DFN

GPIHV30DFN

GANFET N-CH 1200V 30A DFN8X8

GaNPower
112 -

RFQ

GPIHV30DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65060DFN

GPI65060DFN

GANFET N-CH 650V 60A DFN8X8

GaNPower
120 -

RFQ

GPI65060DFN

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 60A 6V - 1.2V @ 3.5mA 16 nC @ 6 V +7.5V, -12V 420 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPI65005DF

GPI65005DF

GANFET N-CH 650V 5A DFN 5X6

GaNPower
3,765 -

RFQ

GPI65005DF

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 5A 6V - 1.4V @ 1.75mA 2.6 nC @ 6 V +7.5V, -12V 45 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
GPIHV30SB5L

GPIHV30SB5L

GANFET N-CH 1200V 30A TO263-5L

GaNPower
3,091 -

RFQ

GPIHV30SB5L

Ficha técnica

Tube - Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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