Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GP2T080A120H

GP2T080A120H

SIC MOSFET 1200V 80M TO-247-4L

SemiQ
3,717 -

RFQ

GP2T080A120H

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 61 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
GCMX080B120S1-E1

GCMX080B120S1-E1

SIC 1200V 80M MOSFET SOT-227

SemiQ
3,515 -

RFQ

GCMX080B120S1-E1

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1336 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
GCMS080B120S1-E1

GCMS080B120S1-E1

SIC 1200V 80M MOSFET & 10A SBD S

SemiQ
3,029 -

RFQ

GCMS080B120S1-E1

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1374 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
GP2T040A120U

GP2T040A120U

SIC MOSFET 1200V 40M TO-247-3L

SemiQ
3,383 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 118 nC @ 20 V +25V, -10V 3192 pF @ 1000 V - - -55°C ~ 175°C (TJ) Through Hole
GP2T040A120H

GP2T040A120H

SIC MOSFET 1200V 40M TO-247-4L

SemiQ
3,770 -

RFQ

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 20V 52mOhm @ 40A, 20V 4V @ 10mA 118 nC @ 20 V +25V, -10V 3192 pF @ 1000 V - - -55°C ~ 175°C (TJ) Through Hole
GP2T080A120U

GP2T080A120U

SIC MOSFET 1200V 80M TO-247-3L

SemiQ
3,046 -

RFQ

GP2T080A120U

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1377 pF @ 1000 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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