| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                     
                    
                     
                     
                    
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                    PMV62XN215SMALL SIGNAL FET NXP USA Inc. |  
                9,000 | - | 
                    
                    RFQ | 
                   
                   Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
                 | 
              
                    PMN15UN115SMALL SIGNAL FET NXP USA Inc. |  
                9,000 | - | 
                    
                    RFQ | 
                   
                   Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | |
                     
                    
                     
                     
                    
                 | 
              
                    PMDPB760EN115SMALL SIGNAL FET NXP USA Inc. |  
                9,000 | - | 
                    
                    RFQ | 
                   
                   Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
                 | 
              
                    PH6530AL115POWER FIELD-EFFECT TRANSISTOR NXP USA Inc. |  
                4,500 | - | 
                    
                    RFQ | 
                   
                   Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | |
                     
                    
                     
                     
                    
                 | 
              
                    BUK6209-30C,118MOSFET N-CH 30V 50A DPAK NXP USA Inc. |  
                9,725 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Ta) | - | 9.8mOhm @ 12A, 10V | 2.8V @ 1mA | 30.5 nC @ 10 V | ±16V | 1760 pF @ 25 V | - | 80W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK6213-30A,118TRANSISTOR >30MHZ NXP USA Inc. |  
                4,990 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 10V | 13mOhm @ 10A, 10V | 3V @ 1mA | 44 nC @ 10 V | ±16V | 1986 pF @ 25 V | - | 102W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK7535-55A,127PFET, 35A I(D), 55V, 0.035OHM, 1 NXP USA Inc. |  
                9,896 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 35mOhm @ 20A, 10V | 4V @ 1mA | - | ±20V | 872 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    BUK7528-55A,127PFET, 42A I(D), 55V, 0.028OHM, 1 NXP USA Inc. |  
                4,285 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 28mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1165 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    PSMN050-80BS,118POWER FIELD-EFFECT TRANSISTOR, 2 NXP USA Inc. |  
                3,200 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Tc) | 10V | 46mOhm @ 10A, 10V | 4V @ 1mA | 11 nC @ 10 V | ±20V | 633 pF @ 12 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    BUK7E13-60E,127MOSFET N-CH 60V 58A I2PAK NXP USA Inc. |  
                1,470 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 58A (Ta) | - | 13mOhm @ 15A, 10V | 4V @ 1mA | 22.9 nC @ 10 V | ±20V | 1730 pF @ 25 V | - | 96W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK7507-30B,127PFET, 75A I(D), 30V, 0.007OHM, 1 NXP USA Inc. |  
                4,611 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 1mA | 36 nC @ 10 V | ±20V | 2427 pF @ 25 V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK7516-55A,127PFET, 65.7A I(D), 55V, 0.016OHM NXP USA Inc. |  
                4,353 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 65.7A (Tc) | 10V | 16mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2245 pF @ 25 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | |
                     
                    
                     
                     
                    
                 | 
              
                    BUK7230-55A,118PFET, 38A I(D), 55V, 0.03OHM, 1- NXP USA Inc. |  
                6,270 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 38A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1152 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    BUK9514-55A,127PFET, 73A I(D), 55V, 0.015OHM, 1 NXP USA Inc. |  
                7,857 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 73A (Tc) | 4.5V, 10V | 13mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 3307 pF @ 25 V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    BUK7511-55B,127MOSFET N-CH 55V 75A TO220AB NXP USA Inc. |  
                2,208 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 11mOhm @ 25A, 10V | 4V @ 1mA | 37 nC @ 10 V | ±20V | 2604 pF @ 25 V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    BUK724R5-30C118N-CHANNEL POWER MOSFET NXP USA Inc. |  
                8,878 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 10V | 4.5mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±20V | 3760 pF @ 25 V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    BUK9535-100A,127MOSFET N-CH 100V 41A TO220AB NXP USA Inc. |  
                4,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 41A (Tc) | 4.5V, 10V | 34mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 3573 pF @ 25 V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK7628-55A/C1118N-CHANNEL POWER MOSFET NXP USA Inc. |  
                1,600 | - | 
                    
                    RFQ | 
                   
                   Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
                     
                    
                     
                     
                    
                 | 
              
                    BUK9511-55A,127MOSFET N-CH 55V 75A TO220AB NXP USA Inc. |  
                2,002 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Ta) | - | 10mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 4230 pF @ 25 V | - | 166W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    BUK7507-55B,127PFET, 119A I(D), 55V, 0.0071OHM NXP USA Inc. |  
                3,998 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7.1mOhm @ 25A, 10V | 4V @ 1mA | 53 nC @ 10 V | ±20V | 3760 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) |