Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU6B-M3/45

GBU6B-M3/45

BRIDGE RECT 1PHASE 100V 6A GBU

Vishay General Semiconductor - Diodes Division
3,550 -

RFQ

GBU6B-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-M3/45

GBU6D-M3/45

BRIDGE RECT 1PHASE 200V 6A GBU

Vishay General Semiconductor - Diodes Division
3,633 -

RFQ

GBU6D-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-M3/45

GBU6G-M3/45

BRIDGE RECT 1PHASE 400V 6A GBU

Vishay General Semiconductor - Diodes Division
3,516 -

RFQ

GBU6G-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-M3/45

GBU6J-M3/45

BRIDGE RECT 1PHASE 600V 6A GBU

Vishay General Semiconductor - Diodes Division
2,682 -

RFQ

GBU6J-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K-M3/45

GBU6K-M3/45

BRIDGE RECT 1PHASE 800V 6A GBU

Vishay General Semiconductor - Diodes Division
2,863 -

RFQ

GBU6K-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 6 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M-M3/45

GBU6M-M3/45

BRIDGE RECT 1PHASE 1KV 6A GBU

Vishay General Semiconductor - Diodes Division
2,267 -

RFQ

GBU6M-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B-M3/45

GBU8B-M3/45

BRIDGE RECT 1PHASE 100V 8A GBU

Vishay General Semiconductor - Diodes Division
2,746 -

RFQ

GBU8B-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D-M3/45

GBU8D-M3/45

BRIDGE RECT 1PHASE 200V 8A GBU

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GBU8D-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G-M3/45

GBU8G-M3/45

BRIDGE RECT 1PHASE 400V 8A GBU

Vishay General Semiconductor - Diodes Division
2,410 -

RFQ

GBU8G-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J-M3/45

GBU8J-M3/45

BRIDGE RECT 1PHASE 600V 8A GBU

Vishay General Semiconductor - Diodes Division
3,260 -

RFQ

GBU8J-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1008-E3/45

BU1008-E3/45

BRIDGE RECT 1P 800V 3.2A BU

Vishay General Semiconductor - Diodes Division
3,071 -

RFQ

BU1008-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6J-E3/45

GBU6J-E3/45

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,830 -

RFQ

GBU6J-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-M3/45

GBU8K-M3/45

BRIDGE RECT 1PHASE 800V 8A GBU

Vishay General Semiconductor - Diodes Division
2,471 -

RFQ

GBU8K-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1510-E3/51

BU1510-E3/51

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
3,865 -

RFQ

BU1510-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1206-M3/51

BU1206-M3/51

BRIDGE RECT 1P 600V 12A BU

Vishay General Semiconductor - Diodes Division
2,606 -

RFQ

BU1206-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-M3/51

BU1208-M3/51

BRIDGE RECT 1P 800V 12A BU

Vishay General Semiconductor - Diodes Division
2,724 -

RFQ

BU1208-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-M3/51

BU1210-M3/51

BRIDGE RECT 1P 1KV 12A BU

Vishay General Semiconductor - Diodes Division
3,801 -

RFQ

BU1210-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1006A-M3/45

BU1006A-M3/45

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,759 -

RFQ

BU1006A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-M3/45

BU1010A-M3/45

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,299 -

RFQ

BU1010A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB15A20-E3/45

GSIB15A20-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,196 -

RFQ

GSIB15A20-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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