Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBP202G

KBP202G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
3,200 -

RFQ

KBP202G

Ficha técnica

Tube - Active Single Phase Standard 200 V 1.2 A 1.1 V @ 2 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole
KBP206G

KBP206G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
3,161 -

RFQ

KBP206G

Ficha técnica

Tube - Active Single Phase Standard 600 V 1.2 A 1.1 V @ 2 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole
KBPC3500WP

KBPC3500WP

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,203 -

RFQ

KBPC3500WP

Ficha técnica

Box - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 10 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole
KBP304G

KBP304G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
3,533 -

RFQ

KBP304G

Ficha técnica

Tube - Active Single Phase Standard 400 V 1.8 A 1.1 V @ 3 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole
KBP302G

KBP302G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
3,056 -

RFQ

KBP302G

Ficha técnica

Tube - Active Single Phase Standard 200 V 1.8 A 1.1 V @ 3 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole
KBP306G

KBP306G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,681 -

RFQ

KBP306G

Ficha técnica

Tube - Active Single Phase Standard 600 V 1.8 A 1.1 V @ 3 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole
KBP308G

KBP308G

BRIDGE RECTIFIER, SINGLE PHASE

Diotec Semiconductor
2,239 -

RFQ

KBP308G

Ficha técnica

Tube - Active Single Phase Standard 800 V 1.8 A 1.1 V @ 3 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole
GBI25W

GBI25W

1BRect, 1600V, 25A

Diotec Semiconductor
3,230 -

RFQ

GBI25W

Ficha técnica

Box - Active Single Phase Standard 1.6 kV 5 A 1.1 V @ 12.5 A 5 µA @ 1600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI35K

GBI35K

1BRect, 800V, 35A

Diotec Semiconductor
3,157 -

RFQ

GBI35K

Ficha técnica

Box - Active Single Phase Standard 800 V 5 A 1.1 V @ 17.5 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI40M

GBI40M

1BRect, 1000V, 40A, 1500ns

Diotec Semiconductor
2,478 -

RFQ

GBI40M

Ficha técnica

Box - Active Single Phase Standard 1 kV 6 A 1.1 V @ 20 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI40K

GBI40K

1BRect, 800V, 40A, 1500ns

Diotec Semiconductor
2,916 -

RFQ

GBI40K

Ficha técnica

Box - Active Single Phase Standard 800 V 6 A 1.1 V @ 20 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI10A

GBI10A

1BRect, 50V, 10A

Diotec Semiconductor
500 -

RFQ

GBI10A

Ficha técnica

Box - Active Single Phase Standard 50 V 3 A 1.1 V @ 5 A 5 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI10G

GBI10G

1BRect, 400V, 10A

Diotec Semiconductor
2,235 -

RFQ

GBI10G

Ficha técnica

Box - Active Single Phase Standard 400 V 3 A 1.1 V @ 5 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI15M

GBI15M

1BRect, 1000V, 15A

Diotec Semiconductor
3,788 -

RFQ

GBI15M

Ficha técnica

Box - Active Single Phase Standard 1 kV 3.2 A 1.1 V @ 7.5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI10M

GBI10M

1BRect, 1000V, 10A

Diotec Semiconductor
3,424 -

RFQ

GBI10M

Ficha técnica

Box - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI15B

GBI15B

1BRect, 100V, 15A

Diotec Semiconductor
3,756 -

RFQ

GBI15B

Ficha técnica

Box - Active Single Phase Standard 100 V 3.2 A 1.1 V @ 7.5 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBI15D

GBI15D

1BRect, 200V, 15A

Diotec Semiconductor
2,506 -

RFQ

GBI15D

Ficha técnica

Box - Active Single Phase Standard 200 V 3.2 A 1.1 V @ 7.5 A 5 µA @ 200 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBI
GBU10M

GBU10M

1BRect, 1000V, 10A

Diotec Semiconductor
3,265 -

RFQ

GBU10M

Ficha técnica

Box - Active Single Phase Standard 1 kV 7 A 1.1 V @ 10 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU10K

GBU10K

1BRect, 800V, 10A

Diotec Semiconductor
2,807 -

RFQ

GBU10K

Ficha técnica

Box - Active Single Phase Standard 800 V 7 A 1.1 V @ 10 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU10J

GBU10J

1BRect, 600V, 10A

Diotec Semiconductor
2,239 -

RFQ

GBU10J

Ficha técnica

Box - Active Single Phase Standard 600 V 7 A 1.1 V @ 10 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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