Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBPC25005W

GBPC25005W

BRIDGE RECT 1P 50V 25A GBPC-W

onsemi
3,114 -

RFQ

GBPC25005W

Ficha técnica

Bulk,Tray - Active Single Phase Standard 50 V 25 A - 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC50005T

GBPC50005T

BRIDGE RECT 1PHASE 50V 50A GBPC

GeneSiC Semiconductor
2,881 -

RFQ

GBPC50005T

Ficha técnica

Bulk - Active Single Phase Standard 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5010T

GBPC5010T

BRIDGE RECT 1PHASE 1KV 50A GBPC

GeneSiC Semiconductor
3,061 -

RFQ

GBPC5010T

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5001T

GBPC5001T

BRIDGE RECT 1PHASE 100V 50A GBPC

GeneSiC Semiconductor
2,662 -

RFQ

GBPC5001T

Ficha técnica

Bulk - Active Single Phase Standard 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5002T

GBPC5002T

BRIDGE RECT 1PHASE 200V 50A GBPC

GeneSiC Semiconductor
2,126 -

RFQ

GBPC5002T

Ficha técnica

Bulk - Active Single Phase Standard 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5004T

GBPC5004T

BRIDGE RECT 1PHASE 400V 50A GBPC

GeneSiC Semiconductor
2,647 -

RFQ

GBPC5004T

Ficha técnica

Bulk - Active Single Phase Standard 400 V 50 A 1.2 V @ 25 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5006T

GBPC5006T

BRIDGE RECT 1PHASE 600V 50A GBPC

GeneSiC Semiconductor
2,856 -

RFQ

GBPC5006T

Ficha técnica

Bulk - Active Single Phase Standard 600 V 50 A 1.2 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC5008T

GBPC5008T

BRIDGE RECT 1PHASE 800V 50A GBPC

GeneSiC Semiconductor
2,339 -

RFQ

GBPC5008T

Ficha técnica

Bulk - Active Single Phase Standard 800 V 50 A 1.2 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC50005W

GBPC50005W

BRIDGE RECT 1P 50V 50A GBPC-W

GeneSiC Semiconductor
3,128 -

RFQ

GBPC50005W

Ficha técnica

Bulk - Active Single Phase Standard 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5001W

GBPC5001W

BRIDGE RECT 1P 100V 50A GBPC-W

GeneSiC Semiconductor
2,623 -

RFQ

GBPC5001W

Ficha técnica

Bulk - Active Single Phase Standard 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5002W

GBPC5002W

BRIDGE RECT 1P 200V 50A GBPC-W

GeneSiC Semiconductor
3,731 -

RFQ

GBPC5002W

Ficha técnica

Bulk - Active Single Phase Standard 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5004W

GBPC5004W

BRIDGE RECT 1P 400V 50A GBPC-W

GeneSiC Semiconductor
2,784 -

RFQ

GBPC5004W

Ficha técnica

Bulk - Active Single Phase Standard 400 V 50 A 1.2 V @ 25 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5006W

GBPC5006W

BRIDGE RECT 1P 600V 50A GBPC-W

GeneSiC Semiconductor
2,730 -

RFQ

GBPC5006W

Ficha técnica

Bulk - Active Single Phase Standard 600 V 50 A 1.2 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5008W

GBPC5008W

BRIDGE RECT 1P 800V 50A GBPC-W

GeneSiC Semiconductor
3,296 -

RFQ

GBPC5008W

Ficha técnica

Bulk - Active Single Phase Standard 800 V 50 A 1.2 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC5010W

GBPC5010W

BRIDGE RECT 1P 1KV 50A GBPC-W

GeneSiC Semiconductor
2,291 -

RFQ

GBPC5010W

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 50 A 1.2 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC12005W-E4/51

GBPC12005W-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,565 -

RFQ

GBPC12005W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1204W-E4/51

GBPC1204W-E4/51

BRIDGE RECT 1P 400V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
2,953 -

RFQ

GBPC1204W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 12 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1208-E4/51

GBPC1208-E4/51

BRIDGE RECT 1PHASE 800V 12A GBPC

Vishay General Semiconductor - Diodes Division
2,070 -

RFQ

GBPC1208-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC1208W-E4/51

GBPC1208W-E4/51

BRIDGE RECT 1P 800V 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,490 -

RFQ

GBPC1208W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC1210W-E4/51

GBPC1210W-E4/51

BRIDGE RECT 1P 1KV 12A GBPC-W

Vishay General Semiconductor - Diodes Division
3,241 -

RFQ

GBPC1210W-E4/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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