Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GSIB1580-5402E3/45

GSIB1580-5402E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,919 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB1580-5410E3/45

GSIB1580-5410E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,677 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A60L-81E3/45

GSIB15A60L-81E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,627 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A60L-83E3/45

GSIB15A60L-83E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,103 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A60L-83E3/72

GSIB15A60L-83E3/72

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,635 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2560L-803E3/45

GSIB2560L-803E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,867 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2560NL-01M3/P

GSIB2560NL-01M3/P

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,431 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-5401E3/45

GSIB2580-5401E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,552 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-5402E3/45

GSIB2580-5402E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,469 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB660L-5700E3/45

GSIB660L-5700E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,690 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB6A60L-802E3/45

GSIB6A60L-802E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,042 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB6A60L-803E3/45

GSIB6A60L-803E3/45

BRIDGE RECT 1P 600V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,141 -

RFQ

Tube - Obsolete Single Phase Standard 600 V 2.8 A 1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
MBL108S-01M3/I

MBL108S-01M3/I

BRIDGE RECT 1PHASE 800V 1A 4SMD

Vishay General Semiconductor - Diodes Division
2,577 -

RFQ

Tube - Obsolete Single Phase Standard 800 V 1 A 950 mV @ 400 mA 5 µA @ 800 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
KBL401G T0

KBL401G T0

BRIDGE RECT 1PHASE 50V 4A KBL

Taiwan Semiconductor Corporation
2,462 -

RFQ

KBL401G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 4 A 1.1 V @ 4 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL402G T0

KBL402G T0

BRIDGE RECT 1PHASE 100V 4A KBL

Taiwan Semiconductor Corporation
2,580 -

RFQ

KBL402G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 4 A 1.1 V @ 4 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL403G T0

KBL403G T0

BRIDGE RECT 1PHASE 200V 4A KBL

Taiwan Semiconductor Corporation
3,513 -

RFQ

KBL403G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 4 A 1.1 V @ 4 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL601G T0

KBL601G T0

BRIDGE RECT 1PHASE 50V 6A KBL

Taiwan Semiconductor Corporation
3,825 -

RFQ

KBL601G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 6 A 1.1 V @ 6 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL602G T0

KBL602G T0

BRIDGE RECT 1PHASE 100V 6A KBL

Taiwan Semiconductor Corporation
2,585 -

RFQ

KBL602G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 100 V 6 A 1.1 V @ 6 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL603G T0

KBL603G T0

BRIDGE RECT 1PHASE 200V 6A KBL

Taiwan Semiconductor Corporation
3,451 -

RFQ

KBL603G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 200 V 6 A 1.1 V @ 6 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBU1001G T0

KBU1001G T0

BRIDGE RECT 1PHASE 50V 10A KBU

Taiwan Semiconductor Corporation
3,500 -

RFQ

KBU1001G T0

Ficha técnica

Tray - Discontinued at Mosen Single Phase Standard 50 V 10 A 1.1 V @ 10 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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