Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MUR10020CTR

MUR10020CTR

DIODE MODULE 200V 50A 2TOWER

GeneSiC Semiconductor
3,128 -

RFQ

MUR10020CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard 200 V 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MUR10040CT

MUR10040CT

DIODE MODULE 400V 50A 2TOWER

GeneSiC Semiconductor
3,679 -

RFQ

MUR10040CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 400 V 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
MUR10040CTR

MUR10040CTR

DIODE MODULE 400V 50A 2TOWER

GeneSiC Semiconductor
3,010 -

RFQ

MUR10040CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Standard 400 V 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C Chassis Mount
FST160150

FST160150

DIODE SCHOTTKY 150V 80A TO249AB

GeneSiC Semiconductor
2,011 -

RFQ

FST160150

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 150 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 150 V -55°C ~ 150°C Chassis Mount
FST160200

FST160200

DIODE SCHOTTKY 200V 80A TO249AB

GeneSiC Semiconductor
3,028 -

RFQ

FST160200

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBRT120200

MBRT120200

DIODE SCHOTTKY 200V 60A 3 TOWER

GeneSiC Semiconductor
3,106 -

RFQ

MBRT120200

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 200 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C Chassis Mount
MBRT120200R

MBRT120200R

DIODE SCHOTTKY 200V 60A 3 TOWER

GeneSiC Semiconductor
2,445 -

RFQ

MBRT120200R

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 200 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V -55°C ~ 150°C Chassis Mount
MSRT150120AD

MSRT150120AD

DIODE GEN 1.2KV 150A 3 TOWER

GeneSiC Semiconductor
3,967 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1200 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C Chassis Mount
MSRT150140AD

MSRT150140AD

DIODE GEN 1.4KV 150A 3 TOWER

GeneSiC Semiconductor
3,148 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRT150160AD

MSRT150160AD

DIODE GEN 1.6KV 150A 3 TOWER

GeneSiC Semiconductor
3,839 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1600 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C Chassis Mount
MSRT15060AD

MSRT15060AD

DIODE GEN PURP 600V 150A 3 TOWER

GeneSiC Semiconductor
3,752 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT15080AD

MSRT15080AD

DIODE GEN PURP 800V 150A 3 TOWER

GeneSiC Semiconductor
3,244 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C Chassis Mount
MBR20030CT

MBR20030CT

DIODE MODULE 30V 200A 2TOWER

GeneSiC Semiconductor
2,138 -

RFQ

MBR20030CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 30 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR20030CTR

MBR20030CTR

DIODE MODULE 30V 200A 2TOWER

GeneSiC Semiconductor
2,828 -

RFQ

MBR20030CTR

Ficha técnica

Bulk - Active 1 Pair Common Anode Schottky 30 V 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V -55°C ~ 150°C Chassis Mount
MBR200100CT

MBR200100CT

DIODE MODULE 100V 200A 2TOWER

GeneSiC Semiconductor
3,727 -

RFQ

MBR200100CT

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 100 V 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V - Chassis Mount
MSRT200100AD

MSRT200100AD

DIODE GEN 1KV 200A 3 TOWER

GeneSiC Semiconductor
2,103 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1000 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C Chassis Mount
MSRT200120AD

MSRT200120AD

DIODE GEN 1.2KV 200A 3 TOWER

GeneSiC Semiconductor
2,447 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1200 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C Chassis Mount
MSRT200140AD

MSRT200140AD

DIODE GEN 1.4KV 200A 3 TOWER

GeneSiC Semiconductor
3,923 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRT200160AD

MSRT200160AD

DIODE GEN 1.6KV 200A 3 TOWER

GeneSiC Semiconductor
2,273 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C Chassis Mount
MSRT20060AD

MSRT20060AD

DIODE GEN PURP 600V 200A 3 TOWER

GeneSiC Semiconductor
3,598 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 200A 1.1 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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