Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
GP3D030A120U

GP3D030A120U

SIC SCHOTTKY DIODE 1200V TO247-3

SemiQ
3,935 -

RFQ

GP3D030A120U

Ficha técnica

Tube Amp+™ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1.2 kV -55°C ~ 175°C Through Hole
GHXS010A060S-D3

GHXS010A060S-D3

DIODE SBD SCHOTT 600V 10A SOT227

SemiQ
3,330 -

RFQ

GHXS010A060S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 600 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 600 V -55°C ~ 175°C Chassis Mount
GHXS020A060S-D3

GHXS020A060S-D3

DIODE SBD SHOTT 600V 20A SOT227

SemiQ
2,902 -

RFQ

GHXS020A060S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 600 V 20A 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 600 V -55°C ~ 175°C Chassis Mount
GHXS015A120S-D3

GHXS015A120S-D3

DIODE SCHOT SBD 1200V 15A SOT227

SemiQ
3,456 -

RFQ

GHXS015A120S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 1200 V 15A 1.7 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 1200 V -55°C ~ 175°C Chassis Mount
GHXS030A120S-D3

GHXS030A120S-D3

DIODE SCHOTKY 1200V 30A SOT227

SemiQ
2,118 -

RFQ

GHXS030A120S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 1200 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) - 200 µA @ 1200 V -55°C ~ 175°C Chassis Mount
GHXS050A170S-D3

GHXS050A170S-D3

1700V 50A SIC SBD PARALLEL

SemiQ
2,539 -

RFQ

GHXS050A170S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 1700 V 150A 1.9 V @ 50 A No Recovery Time > 500mA (Io) - 750 µA @ 1700 V -55°C ~ 175°C Chassis Mount
GHXS100B065S-D3

GHXS100B065S-D3

SIC SBD PARALLEL POWER MODULE 65

SemiQ
3,161 -

RFQ

GHXS100B065S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 650 V 193A (DC) 1.65 V @ 100 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V -55°C ~ 175°C Chassis Mount
GP3D024A065U

GP3D024A065U

SIC SCHOTTKY DIODE 650V TO247-3

SemiQ
3,172 -

RFQ

GP3D024A065U

Ficha técnica

Tube Amp+™ Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 12A 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V -55°C ~ 175°C Through Hole
GP3D020A120U

GP3D020A120U

SIC SCHOTTKY DIODE 1200V TO247-3

SemiQ
3,513 -

RFQ

GP3D020A120U

Ficha técnica

Tube Amp+™ Active 1 Pair Common Cathode Silicon Carbide Schottky 1200 V 10A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1.2 kV -55°C ~ 175°C Through Hole
GSXF030A020S1-D3

GSXF030A020S1-D3

DIODE FAST REC 200V 30A SOT227

SemiQ
2,417 -

RFQ

GSXF030A020S1-D3

Ficha técnica

Tube - Active 2 Independent Standard 200 V 30A 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 25 µA @ 200 V -55°C ~ 175°C Chassis Mount
GP3D060A120U

GP3D060A120U

DIODE ARRAY SCHOTTKY 1200V TO247

SemiQ
3,116 -

RFQ

GP3D060A120U

Ficha técnica

Tube Amp+™ Active - Silicon Carbide Schottky 1200 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1.2 kV -55°C ~ 175°C Through Hole
GSXD050A015S1-D3

GSXD050A015S1-D3

DIODE SCHOTTKY 150V 50A SOT227

SemiQ
2,497 -

RFQ

GSXD050A015S1-D3

Ficha técnica

Tube - Active 2 Independent Schottky 150 V 50A 880 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
GSXD050A012S1-D3

GSXD050A012S1-D3

DIODE SCHOTTKY 120V 50A SOT227

SemiQ
3,231 -

RFQ

GSXD050A012S1-D3

Ficha técnica

Tube - Active 2 Independent Schottky 120 V 50A 880 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
GSXD120A020S1-D3

GSXD120A020S1-D3

DIODE SCHOTTKY 200V 120A SOT227

SemiQ
2,453 -

RFQ

GSXD120A020S1-D3

Ficha técnica

Tube - Active 2 Independent Schottky 200 V 120A 920 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
GP3D020A065U

GP3D020A065U

SIC SCHOTTKY DIODE 650V TO247-3

SemiQ
3,050 -

RFQ

GP3D020A065U

Ficha técnica

Tube Amp+™ Active 1 Pair Common Cathode Silicon Carbide Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V -55°C ~ 175°C Through Hole
GSXD080A004S1-D3

GSXD080A004S1-D3

DIODE SCHOTTKY 45V 80A SOT227

SemiQ
3,492 -

RFQ

GSXD080A004S1-D3

Ficha técnica

Tube - Active 2 Independent Schottky 45 V 80A 700 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V -40°C ~ 150°C Chassis Mount
GSXD120A004S1-D3

GSXD120A004S1-D3

DIODE SCHOTTKY 45V 120A SOT227

SemiQ
2,650 -

RFQ

GSXD120A004S1-D3

Ficha técnica

Tube - Active 2 Independent Schottky 45 V 120A 700 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V -40°C ~ 150°C Chassis Mount
GHXS050A060S-D3

GHXS050A060S-D3

DIODE SCHOTT SBD 600V 50A SOT227

SemiQ
2,599 -

RFQ

GHXS050A060S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 600 V 50A 1.8 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 600 V -55°C ~ 175°C Chassis Mount
GHXS050B065S-D3

GHXS050B065S-D3

SIC SBD PARALLEL POWER MODULE 65

SemiQ
2,722 -

RFQ

GHXS050B065S-D3

Ficha técnica

Tube - Active 2 Independent Silicon Carbide Schottky 650 V 95A (DC) 1.6 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 125 µA @ 650 V -55°C ~ 175°C Chassis Mount
GSXF100A120S1-D3

GSXF100A120S1-D3

DIODE FAST REC 1200V 100A SOT227

SemiQ
3,446 -

RFQ

GSXF100A120S1-D3

Ficha técnica

Tube - Active 2 Independent Standard 1200 V 100A 2.35 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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