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Diodos - Retificadores - Matrizes
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RB085BGE-60MOSFET N/P-CH onsemi |
3,383 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
RBQ10BM100AFHMOSFET N/P-CH onsemi |
3,058 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
|
|
PXP5R8-30QLJDIODE ARRAY SCHOTTKY Nexperia USA Inc. |
3,139 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | |
|
DSA20C60PBSCHOTTKY-DIODE IXYS |
2,522 | - |
RFQ |
Tube | - | Discontinued at Mosen | 1 Pair Common Cathode | Schottky | 60 V | 10A | 860 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | -55°C ~ 175°C | Through Hole | |
|
|
MDD810-12N2MDD 810 - 12 N2 IXYS |
3,193 | - |
RFQ |
Box | - | Discontinued at Mosen | 1 Pair Series Connection | Standard | 1200 V | 807A | 1.24 V @ 2000 A | Standard Recovery >500ns, > 200mA (Io) | 16.5 µs | 50 mA @ 1200 V | -40°C ~ 150°C | Chassis Mount | |
|
BAV23C-13-FDIODE ARRAY GP 200V 400MA SOT23 Diodes Incorporated |
2,400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | Obsolete | 1 Pair Common Cathode | Standard | 200 V | 400mA (DC) | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | -65°C ~ 150°C | Surface Mount |
|
|
MDD600-14N1MOD BIPOLAR DIODE 1400V IXYS |
2,420 | - |
RFQ |
Tray | - | Obsolete | 1 Pair Series Connection | Standard | 1400 V | 883A | 1.15 V @ 1800 A | Standard Recovery >500ns, > 200mA (Io) | 18 µs | 50 mA @ 1400 V | -40°C ~ 125°C | Chassis Mount | |
|
WNSC2D401200CWQDUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors |
2,899 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Discontinued at Mosen | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 40A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 175°C | Through Hole |
|
SFF1007GHDIODE GEN PURP 10A 500V ITO220AB Taiwan Semiconductor Corporation |
3,238 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Standard | 500 V | 10A (DC) | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 500 V | -55°C ~ 150°C | Through Hole | |
|
|
SFF1002GAHDIODE GEN PURP 10A 100V ITO220AC Taiwan Semiconductor Corporation |
3,491 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Anode | Standard | 100 V | 10A (DC) | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | -55°C ~ 150°C | Through Hole | |
|
MBR2035PTHDIODE SCHOTTKY TO3P Taiwan Semiconductor Corporation |
3,742 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Schottky | 35 V | 20A (DC) | 840 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | -55°C ~ 150°C | Through Hole | |
|
MBR1035CTDIODE SCHOTTKY 10A 35V TO220AB Taiwan Semiconductor Corporation |
2,237 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 35 V | 10A (DC) | 800 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | -55°C ~ 150°C | Through Hole | |
|
|
SR1090HDIODE SCHOTTKY 90V 10A TO220AB Taiwan Semiconductor Corporation |
3,958 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Schottky | 90 V | 10A (DC) | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | -55°C ~ 150°C | Through Hole | |
|
|
SF803GHDIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation |
3,079 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Standard | 150 V | 8A (DC) | 975 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | -55°C ~ 150°C | Through Hole | |
|
|
SFF1003GAHDIODE GEN PURP 10A 150V ITO220AC Taiwan Semiconductor Corporation |
3,521 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Anode | Standard | 150 V | 10A (DC) | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | -55°C ~ 150°C | Through Hole | |
|
|
MBR2090PTDIODE ARRAY SCHOTTKY 90V TO247AD Taiwan Semiconductor Corporation |
2,369 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 90 V | 20A (DC) | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | -55°C ~ 150°C | Through Hole | |
|
|
MBR2050PTHDIODE SCHOTTKY 20A 50V TO247AD Taiwan Semiconductor Corporation |
3,283 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Schottky | 50 V | 20A (DC) | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 50 V | -55°C ~ 150°C | Through Hole | |
|
|
SR4050PTDIODE SCHOTTKY 50V 40A TO3P Taiwan Semiconductor Corporation |
3,308 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Schottky | 50 V | 40A (DC) | 700 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 50 V | -55°C ~ 150°C | Through Hole | |
|
|
SR1690PTHDIODE SCHOTTKY 16A 90V TO3P Taiwan Semiconductor Corporation |
2,689 | - |
RFQ |
Tube | Automotive, AEC-Q101 | Active | 1 Pair Common Cathode | Schottky | 90 V | 16A (DC) | 900 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | -55°C ~ 150°C | Through Hole | |
|
|
GP1603DIODE GEN PURP 16A 200V TO220AB Taiwan Semiconductor Corporation |
3,523 | - |
RFQ |
Tube | - | Active | 1 Pair Common Cathode | Standard | 200 V | 16A (DC) | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | -55°C ~ 150°C | Through Hole |
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