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Diodos - Retificadores - Matrizes
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS7004SH6827XTSA1BAS70 - HIGH SPEED SWITCHING, CL Infineon Technologies |
3,802 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
NSVBAV70TT1G100 V DUAL COMMON CATHODE SWITCH onsemi |
2,327 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
|
BAV99SH6433XTMA1BAV99 - DUAL HIGH-SPEED SWITCHIN Infineon Technologies |
2,228 | - |
RFQ |
Ficha técnica |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - |
|
G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology Co. Ltd |
2,160 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology Co. Ltd |
2,116 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology Co. Ltd |
2,100 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
G5S12040PPSIC SCHOTTKY DIODE 1200V 40A 2-P Global Power Technology Co. Ltd |
2,154 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Anode | Silicon Carbide Schottky | 1200 V | 115A (DC) | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology Co. Ltd |
2,467 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G4S12040BMSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology Co. Ltd |
3,872 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 64.5A (DC) | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06560BSIC SCHOTTKY DIODE 650V 4A 3-PIN Global Power Technology Co. Ltd |
3,960 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 95A (DC) | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology Co. Ltd |
2,185 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06506BSIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology Co. Ltd |
3,043 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S12040BSIC SCHOTTKY DIODE 1200V 40A 3-P Global Power Technology Co. Ltd |
2,659 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 64.5A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S17010BSIC SCHOTTKY DIODE 1700V 10A 3-P Global Power Technology Co. Ltd |
2,169 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 29.5A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology Co. Ltd |
2,869 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology Co. Ltd |
3,836 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P Global Power Technology Co. Ltd |
2,574 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
|
|
G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology Co. Ltd |
3,360 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology Co. Ltd |
3,079 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
|
|
G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology Co. Ltd |
3,315 | - |
RFQ |
Bulk | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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