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Diodos - Retificadores - Matrizes

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
ISL9K3060G3 DIODE ARRAY GP 600V 30A TO247 onsemi	444	-	RFQ	Ficha técnica	Tube	Stealth™	Active	1 Pair Common Cathode	Standard	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	100 µA @ 600 V	-55°C ~ 175°C	Through Hole
STPSC20H065CT DIODE SCHOTTKY 650V 10A TO220AB STMicroelectronics	398	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	-40°C ~ 175°C	Through Hole
TRS12N65FB,S1Q SIC SBD TO-247 V=650 IF=12A Toshiba Semiconductor and Storage	222	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	6A (DC)	1.6 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	175°C	Through Hole
C3D16065D DIODE ARRAY SCHOTTKY 650V TO247 Wolfspeed, Inc.	109	-	RFQ	Ficha técnica	Tube	Z-Rec®	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	8A (DC)	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-55°C ~ 175°C	Through Hole
SCS220AE2HRC11 DIODE SCHOTTKY 650V TO-247AC Rohm Semiconductor	374	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A (DC)	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	175°C	Through Hole
SCS210KE2GC11 1200V, 10A, 3-PIN THD, SILICON-C Rohm Semiconductor	450	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	5A (DC)	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	175°C	Through Hole
SCS210KE2HRC11 DIODE SCHOTTKY 650V TO-247AC Rohm Semiconductor	450	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	5A (DC)	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	175°C	Through Hole
SCS230AE2HRC11 650V, 30A, 3-PIN THD, SILICON-CA Rohm Semiconductor	130	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	15A (DC)	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	175°C	Through Hole
TRS16N65FB,S1Q SIC SBD TO-247 V=650 IF=12A Toshiba Semiconductor and Storage	238	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	8A (DC)	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	175°C	Through Hole
SCS220KE2HRC11 DIODE SCHOTTKY 650V TO-247AC Rohm Semiconductor	111	-	RFQ		Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	10A (DC)	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	175°C	Through Hole
80CNQ045SL DIODE SCHOTTKY 45V 40A PRM2-SL SMC Diode Solutions	3,413	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	45 V	40A	660 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	-55°C ~ 150°C	Surface Mount
85CNQ015SL DIODE SCHOTTKY 15V 40A PRM2-SL SMC Diode Solutions	3,450	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	15 V	40A	450 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 mA @ 15 V	-55°C ~ 125°C	Surface Mount
VS-HFA140FA120 DIODE MODULE 1.2KV 70A SOT227 Vishay General Semiconductor - Diodes Division	281	-	RFQ	Ficha técnica	Bulk	HEXFRED®	Active	2 Independent	Standard	1200 V	70A	4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	145 ns	75 µA @ 1200 V	-	Chassis Mount
403CMQ100 DIODE ARRAY SCHOTTKY 100V PRM4 SMC Diode Solutions	146	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	100 V	-	830 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 100 V	-55°C ~ 175°C	Chassis Mount
409CNQ150 DIODE ARRAY SCHOTTKY 150V PRM4 SMC Diode Solutions	136	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	150 V	-	1.03 V @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 150 V	-55°C ~ 150°C	Chassis Mount
GHXS045A120S-D3 DIODE SCHOT SBD 1200V 45A SOT227 SemiQ	2,110	-	RFQ	Ficha técnica	Tube	-	Active	2 Independent	Silicon Carbide Schottky	1200 V	45A	1.7 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 1200 V	-55°C ~ 175°C	Chassis Mount
MURT40040R DIODE MODULE 400V 200A 3TOWER GeneSiC Semiconductor	3,921	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Anode	Standard, Reverse Polarity	400 V	200A	1.35 V @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	25 µA @ 50 V	-55°C ~ 150°C	Chassis Mount
NXPSC20650W6Q DIODE ARRAY SCHOTTKY 650V TO247 WeEn Semiconductors	228	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	175°C (Max)	Through Hole
BAW56W_R1_00001 SOT-323, SWITCHING Panjit International Inc.	3,012	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Anode	Standard	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	-55°C ~ 150°C	Surface Mount
BAV70W_R1_00001 SOT-323, SWITCHING Panjit International Inc.	2,711	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Standard	75 V	150mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	-55°C ~ 150°C	Surface Mount