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Diodos - Retificadores - Matrizes

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
WNSC2D30650WQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	2,616	-	RFQ	Ficha técnica	Tube	-	Active	1 Independent	Silicon Carbide Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	175°C	Through Hole
S3D20065D DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	431	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	-55°C ~ 175°C	Through Hole
PSDH6060CCL1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	2,848	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-55°C ~ 150°C	Through Hole
PSDH6060CCS1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	2,393	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-55°C ~ 150°C	Through Hole
NTE6251 R-SI 200V 30A DUAL FAST NTE Electronics, Inc	200	-	RFQ	Ficha técnica	Bag	-	Active	1 Pair Common Cathode	Standard	200 V	30A	950 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-55°C ~ 150°C	Through Hole
WNSC2D30650CWQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	3,423	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	30A	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
NTE6090 R-DUAL SCHOTTKY 45V 30A NTE Electronics, Inc	408	-	RFQ	Ficha técnica	Bag	-	Active	1 Pair Common Cathode	Standard	45 V	15A	550 mV @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 45 V	-55°C ~ 150°C	Through Hole
PCDH2065CCG1_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	3,934	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	-55°C ~ 175°C	Through Hole
S4D15120D DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	299	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	8A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	-55°C ~ 175°C	Through Hole
VS-60CPU02-N3 DIODE ARRAY GP 200V 30A TO247AC Vishay General Semiconductor - Diodes Division	500	-	RFQ	Ficha técnica	Tube	FRED Pt®	Active	1 Pair Common Cathode	Standard	200 V	30A	1.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	50 µA @ 200 V	-65°C ~ 175°C	Through Hole
NTE6093 R-SI DUAL 60V 60A SCHOTKY NTE Electronics, Inc	195	-	RFQ	Ficha técnica	Bag	-	Active	2 Independent	Schottky	60 V	30A	630 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 60 V	-65°C ~ 125°C	Through Hole
GD2X30MPS06D 650V 60A TO-247-3 SIC SCHOTTKY M GeneSiC Semiconductor	3,401	-	RFQ		Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	600 V	30A (DC)	-	No Recovery Time > 500mA (Io)	0 ns	-	175°C	Through Hole
S4D20120D DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	474	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	-55°C ~ 175°C	Through Hole
PCDH3065CCG1_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	3,204	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	15A (DC)	1.7 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	-55°C ~ 175°C	Through Hole
PCDH4065CCG1_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	3,816	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	-55°C ~ 175°C	Through Hole
GD2X20MPS12D 1200V 40A TO-247-3 SIC SCHOTTK GeneSiC Semiconductor	586	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	39A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	-55°C ~ 175°C	Through Hole
MBRP20035L DIODE SCHOTTKY 35V 200A onsemi	3,468	-	RFQ	Ficha técnica	Bulk	*	Obsolete	-	-	-	-	-	-	-	-	-	-
GD2X30MPS12D DIODE SCHOTTKY 1200V 2X30A TO-24 GeneSiC Semiconductor	521	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	55A (DC)	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
S4D40120D DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	290	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	20A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	-55°C ~ 175°C	Through Hole
VS-U5FX150FA60 SOT-227 - GEN5 FRED IN PARALLEL Vishay General Semiconductor - Diodes Division	158	-	RFQ	Ficha técnica	Tube	FRED Pt®	Active	2 Independent	Standard	600 V	75A (DC)	2.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	50 µA @ 600 V	-55°C ~ 175°C	Chassis Mount