Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR2X060A150

MBR2X060A150

DIODE SCHOTTKY 150V 60A SOT227

GeneSiC Semiconductor
2,077 -

RFQ

MBR2X060A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 60A 880 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X060A180

MBR2X060A180

DIODE SCHOTTKY 180V 60A SOT227

GeneSiC Semiconductor
3,221 -

RFQ

MBR2X060A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X060A200

MBR2X060A200

DIODE SCHOTTKY 200V 60A SOT227

GeneSiC Semiconductor
3,875 -

RFQ

MBR2X060A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X060A10

MUR2X060A10

DIODE GEN PURP 1KV 60A SOT227

GeneSiC Semiconductor
3,713 -

RFQ

MUR2X060A10

Ficha técnica

Bulk - Active 2 Independent Standard 1000 V 60A 2.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X060A12

MUR2X060A12

DIODE GEN PURP 1.2KV 60A SOT227

GeneSiC Semiconductor
2,939 -

RFQ

MUR2X060A12

Ficha técnica

Bulk - Active 2 Independent Standard 1200 V 60A 2.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
MUR2X100A06

MUR2X100A06

DIODE GEN PURP 600V 100A SOT227

GeneSiC Semiconductor
3,555 -

RFQ

MUR2X100A06

Ficha técnica

Bulk - Active 2 Independent Standard 600 V 100A 1.5 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 175°C Chassis Mount
DSEC240-04A

DSEC240-04A

DIODE MODULE 400V 120A SOT227B

IXYS
2,961 -

RFQ

DSEC240-04A

Ficha técnica

Tube HiPerFRED™ Active 1 Pair Common Cathode Standard 400 V 120A 1.07 V @ 120 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 2 mA @ 400 V - Chassis Mount
286-807

286-807

CM-D 7X 1N4007, LIGHT GRAY

WAGO Corporation
2,138 -

RFQ

286-807

Ficha técnica

Box - Active 1 Pair Common Anode Standard 1000 V 1A - Standard Recovery >500ns, > 200mA (Io) - - -25°C ~ 40°C Socketable
286-890

286-890

CM-F 5X20 24VAC/DC, GRAY

WAGO Corporation
3,805 -

RFQ

286-890

Ficha técnica

Box - Active 1 Pair Series Connection Standard 4000 V 6.3A - Standard Recovery >500ns, > 200mA (Io) - - -25°C ~ 40°C Socketable
286-891

286-891

CM-F 5X20 230VAC/DC, GRAY

WAGO Corporation
2,614 -

RFQ

286-891

Ficha técnica

Box - Active 1 Pair Series Connection Standard 4000 V 6.3A - Standard Recovery >500ns, > 200mA (Io) - - -25°C ~ 40°C Socketable
MBR2X080A060

MBR2X080A060

DIODE SCHOTTKY 60V 80A SOT227

GeneSiC Semiconductor
3,654 -

RFQ

MBR2X080A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 80A 750 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X080A080

MBR2X080A080

DIODE SCHOTTKY 80V 80A SOT227

GeneSiC Semiconductor
2,429 -

RFQ

MBR2X080A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 80A 840 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X080A120

MBR2X080A120

DIODE SCHOTTKY 120V 80A SOT227

GeneSiC Semiconductor
3,183 -

RFQ

MBR2X080A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X080A150

MBR2X080A150

DIODE SCHOTTKY 150V 80A SOT227

GeneSiC Semiconductor
2,628 -

RFQ

MBR2X080A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X080A180

MBR2X080A180

DIODE SCHOTTKY 180V 80A SOT227

GeneSiC Semiconductor
3,592 -

RFQ

MBR2X080A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X080A200

MBR2X080A200

DIODE SCHOTTKY 200V 80A SOT227

GeneSiC Semiconductor
2,073 -

RFQ

MBR2X080A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X100A10

MUR2X100A10

DIODE GEN PURP 1KV 100A SOT227

GeneSiC Semiconductor
3,590 -

RFQ

MUR2X100A10

Ficha técnica

Bulk - Active 2 Independent Standard 1000 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X100A12

MUR2X100A12

DIODE GEN PURP 1.2KV 100A SOT227

GeneSiC Semiconductor
3,733 -

RFQ

MUR2X100A12

Ficha técnica

Bulk - Active 2 Independent Standard 1200 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
VS-VSKDS401/045

VS-VSKDS401/045

DIODE SCHOTTKY 45V 100A ADDAPAK

Vishay General Semiconductor - Diodes Division
3,893 -

RFQ

VS-VSKDS401/045

Ficha técnica

Bulk - Active 1 Pair Common Cathode Schottky 45 V 100A 720 mV @ 200 A Fast Recovery =< 500ns, > 200mA (Io) - 20 mA @ 45 V -55°C ~ 175°C Chassis Mount
VS-VSUD400CW60

VS-VSUD400CW60

DIODE GEN PURP 600V 330A TO244

Vishay General Semiconductor - Diodes Division
2,267 -

RFQ

VS-VSUD400CW60

Ficha técnica

Bulk FRED Pt® Active 1 Pair Common Cathode Standard 600 V 330A 2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) 90 ns 1.38 mA @ 200 V -40°C ~ 150°C Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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