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Diodos - Retificadores - Matrizes

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
PC4D30120H 1200V SCHOTTKY Wolfspeed, Inc.	3,936	-	RFQ		Tube	*	Active	-	-	-	-	-	-	-	-	-	-
SK30100CD2-3G Schottky Diode, D2PAK, 100V, 30A Diotec Semiconductor	2,767	-	RFQ	Ficha técnica	Tube,Tube	-	Active	1 Pair Common Cathode	Schottky	100 V	15A	850 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-50°C ~ 150°C	Surface Mount
30CTQ045S SchottkyD, 45V, 30A Diotec Semiconductor	2,026	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Schottky	45 V	15A	620 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-50°C ~ 175°C	Surface Mount
MBR60L45WTG RECTIFIER DIODE, SCHOTTKY, 1 PHA onsemi	3,830	-	RFQ	Ficha técnica	Bulk	SWITCHMODE™	Active	1 Pair Common Cathode	Schottky	45 V	30A	550 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 45 V	-65°C ~ 175°C	Through Hole
G3S06506B SIC SCHOTTKY DIODE 650V 6A 3-PIN Global Power Technology-GPT	3,072	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	14A (DC)	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S06508B SIC SCHOTTKY DIODE 650V 8A 3-PIN Global Power Technology-GPT	3,870	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	14A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S06512B SIC SCHOTTKY DIODE 650V 12A 3-PI Global Power Technology-GPT	2,132	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	27A (DC)	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G3S12004B SIC SCHOTTKY DIODE 1200V 4A 3-PI Global Power Technology-GPT	3,052	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	8.5A (DC)	1.7 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S06510B SIC SCHOTTKY DIODE 650V 10A 3-PI Global Power Technology-GPT	2,864	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	27A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
AS3D020120P2 1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	3,162	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	30A (DC)	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
DPAD10 TO-72 4L LOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc.	3,994	-	RFQ	Ficha técnica	Bulk	DPAD	Active	2 Independent	Standard	45 V	50mA	1.5 V @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	-55°C ~ 150°C	Through Hole
G4S06516BT SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT	3,219	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	25.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
DPAD50 TO-72 4L LOW LEAKAGE, MONOLITHIC DUAL, PI Linear Integrated Systems, Inc.	2,735	-	RFQ	Ficha técnica	Bulk	DPAD	Active	2 Independent	Standard	45 V	50mA	1.5 V @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	50 pA @ 20 V	-55°C ~ 150°C	Through Hole
G3S12006B SIC SCHOTTKY DIODE 1200V 6A 3-PI Global Power Technology-GPT	2,610	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	14A (DC)	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G3S06516B SIC SCHOTTKY DIODE 650V 16A 3-PI Global Power Technology-GPT	3,394	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	25.5A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
G4S06520BT SIC SCHOTTKY DIODE 650V 20A 3-PI Global Power Technology-GPT	3,140	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	31.2A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole
AS3D040120P2 1200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	3,518	-	RFQ	Ficha técnica	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	52A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12016B SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT	2,171	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	27.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12010BM SIC SCHOTTKY DIODE 1200V 10A 3-P Global Power Technology-GPT	2,302	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	19.35A (DC)	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole
G5S12016BM SIC SCHOTTKY DIODE 1200V 16A 3-P Global Power Technology-GPT	2,995	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	27.9A (DC)	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	-55°C ~ 175°C	Through Hole