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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYWF29-200HE3_A/PDIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,899 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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ESH1PCHM3/84ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
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BYWF29-50HE3_A/PDIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,822 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
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ESH1PDHM3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,198 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A |
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MBRB16H35HE3_B/PDIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,526 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A |
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MBRB16H45HE3_B/PDIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,591 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A |
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MBRB16H60HE3_B/PDIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,504 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A |
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MBRB16H35HE3_B/IDIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,246 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A |
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MBRB16H45HE3_B/IDIODE SCHOTTKY 45V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,137 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 16A | -65°C ~ 175°C | 660 mV @ 16 A |
|
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MBRB16H60HE3_B/IDIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,384 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 16A | -65°C ~ 175°C | 730 mV @ 16 A |
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VS-8ETH03-1HM3FREDS - TO-262 Vishay General Semiconductor - Diodes Division |
2,069 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -55°C ~ 175°C | 1.25 V @ 8 A |
|
UG8HT-E3/45DIODE GEN PURP 500V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A | |
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UG8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A | |
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VS-15ETH06STRL-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,600 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
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VS-15ETH06STRR-M3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
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VI30120S-M3/4WDIODE SCHOTTKY 30A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
3,856 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A | |
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SSB44HM3_A/I4A 40V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
3,302 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A |
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SSB44HM3_A/H4A 40V SM SCHOTTKY RECT SMB Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A |
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VS-SD1053C18S20LDIODE GP 1.8KV 1050A DO200AB Vishay General Semiconductor - Diodes Division |
2,418 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | 2 µs | 50 mA @ 1800 V | 1800 V | 1050A | - | 1.9 V @ 1500 A | |
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VS-SD303C20S20CDIODE GEN PURP 2KV 350A DO200AA Vishay General Semiconductor - Diodes Division |
3,476 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Clamp On | - | 2 µs | 35 mA @ 2000 V | 2000 V | 350A | - | 2.26 V @ 1100 A |
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