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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-1N3624RDIODE GEN PURP 700V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,497 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 900 µA @ 700 V | 700 V | 12A | -65°C ~ 200°C | 1.35 V @ 12 A | |
|
VS-MBRD330-M3DIODE SCHOTTKY 3A 30V DPAK Vishay General Semiconductor - Diodes Division |
3,338 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 30 V | 30 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-MBRD340-M3DIODE SCHOTTKY 3A 40V DPAK Vishay General Semiconductor - Diodes Division |
2,987 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 40 V | 40 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-MBRD320TR-M3DIODE SCHOTTKY 3A 20V DPAK Vishay General Semiconductor - Diodes Division |
2,703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 20 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-MBRD330TR-M3DIODE SCHOTTKY 3A 30V DPAK Vishay General Semiconductor - Diodes Division |
2,470 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 30 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-MBRD340TR-M3DIODE SCHOTTKY 3A 40V DPAK Vishay General Semiconductor - Diodes Division |
2,614 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 200 µA @ 20 V | 40 V | 3A | -40°C ~ 150°C | 600 mV @ 3 A | |
|
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VS-30WQ10FNTRL-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,729 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A | |
|
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VS-30WQ10FNTR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,936 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A | |
|
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VS-30WQ10FNTRR-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,229 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A | |
|
VS-100BGQ030HF4DIODE SCHOTTKY 30V 100A POWERTAB Vishay General Semiconductor - Diodes Division |
2,681 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | - | - | 2.4 mA @ 30 V | 30 V | 100A | -55°C ~ 150°C | 630 mV @ 100 A |
|
BY268TAPDIODE GEN PURP 1.4KV 800MA SOD57 Vishay General Semiconductor - Diodes Division |
3,614 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 2 µA @ 1400 V | 1400 V | 800mA | -55°C ~ 150°C | 1.25 V @ 400 mA | |
|
VS-16F80DIODE GEN PURP 800V 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,028 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
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BY458TAPDIODE AVALANCHE 1.2KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 3 µA @ 1200 V | 1200 V | 2A | 140°C (Max) | 1.6 V @ 3 A | |
|
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VS-16FR80DIODE GEN PURP 800V 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,406 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
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BYT51J-TAPDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,136 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
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BYT52G-TAPDIODE AVALANCHE 400V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,905 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 400 V | 400 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
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BYT53B-TAPDIODE AVALANCHE 100V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
3,961 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
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BYT54G-TAPDIODE AVALANCHE 400V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,120 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 400 V | 400 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
VS-60EPU02-N3DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,399 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 28 ns | 50 µA @ 200 V | 200 V | 60A | -55°C ~ 175°C | 1.08 V @ 60 A |
|
|
BYV14-TAPDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,633 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A |
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