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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5401/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,188 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
80EPF02DIODE GEN PURP 200V 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,941 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 190 ns | 100 µA @ 200 V | 200 V | 80A | -65°C ~ 175°C | 1.25 V @ 80 A | |
|
VSKE270-12DIODE GP 1.2KV 270A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,003 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 1200 V | 1200 V | 270A | - | - | |
|
BAW75-TAPDIODE GEN PURP 25V 300MA DO35 Vishay General Semiconductor - Diodes Division |
48,826 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 100 nA @ 25 V | 25 V | 300mA (DC) | 175°C (Max) | 1 V @ 30 mA |
|
BYG24G-E3/TRDIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
2,362 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A | |
|
|
BAV20-TAPDIODE GEN PURP 150V 250MA DO35 Vishay General Semiconductor - Diodes Division |
32,966 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
S1A-E3/61TDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
185,400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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AS1PD-M3/84ADIODE AVALANCHE 200V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
5,760 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
S1G-E3/61TDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
25,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
AS4PD-M3/86ADIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
4,407 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
VS-6EWL06FNTR-M3DIODE GEN PURP 600V 6A DPAK Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 154 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.25 V @ 6 A |
|
|
30WQ10FNDIODE SCHOTTKY 100V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
3,191 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A | |
|
|
80EPF04DIODE GEN PURP 400V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,913 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 190 ns | 100 µA @ 400 V | 400 V | 80A | -65°C ~ 175°C | 1.25 V @ 80 A | |
|
|
VSKE270-16DIODE GP 1.6KV 270A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 1600 V | 1600 V | 270A | - | - | |
|
VS-31DQ05DIODE SCHOTTKY 50V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,845 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 50 V | 50 V | 3.3A | -40°C ~ 150°C | 620 mV @ 3 A | |
|
|
80EPF06DIODE GEN PURP 600V 80A TO247AC Vishay General Semiconductor - Diodes Division |
2,601 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 190 ns | 100 µA @ 600 V | 600 V | 80A | -65°C ~ 175°C | 1.25 V @ 80 A | |
|
|
VSKE270-20DIODE GEN PURP 2KV 270A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,468 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 2000 V | 2000 V | 270A | - | - | |
|
|
VS-31DQ06TRDIODE SCHOTTKY 60V 3.3A C16 Vishay General Semiconductor - Diodes Division |
3,537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 60 V | 60 V | 3.3A | -40°C ~ 150°C | 620 mV @ 3 A | |
|
|
80EPF10DIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 80A | -65°C ~ 175°C | 1.35 V @ 80 A | |
|
|
VSKE320-04DIODE GP 400V 320A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 400 V | 400 V | 320A | - | - |
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