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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS3G/7TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,380 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | ||
|
30HFUR-100DIODE GEN PURP 100V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,663 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 100 V | 100 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
20ETF04SDIODE GEN PURP 400V 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,911 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
S1B-E3/51TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,893 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
VS-30HFUR-200DIODE GEN PURP 200V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,733 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 200 V | 200 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
MUH1PBHM3/89ADIODE GEN PURP 100V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
3,039 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 40 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
20ETF10SDIODE GEN PURP 1KV 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,652 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
|
S1D/1DIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,098 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
30HFUR-400DIODE GEN PURP 400V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 400 V | 400 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
20ETF06SDIODE GEN PURP 600V 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,106 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 160 ns | 100 µA @ 600 V | 600 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
S1G/1DIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,803 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | ||
|
|
30HFUR-600DIODE GEN PURP 600V 30A DO203AB Vishay General Semiconductor - Diodes Division |
2,699 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 600 V | 600 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
S1J-E3/51TDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
30WQ03FNTRLDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
3,071 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
S1M/1DIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,776 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
30WQ03FNTRDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
US1B/1DIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,107 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | ||
|
8ETL06FPDIODE GEN PURP 600V 8A TO220FP Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A | |
|
|
30WQ03FNTRRDIODE SCHOTTKY 30V 3.5A DPAK Vishay General Semiconductor - Diodes Division |
3,388 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 2 mA @ 30 V | 30 V | 3.5A | -40°C ~ 150°C | 450 mV @ 3 A | |
|
|
US1D/1DIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
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