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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EGP10FHE3/54DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,051 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
|
EGP10GEHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,251 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
|
EGP10GHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
BAV100-GS08DIODE GEN PURP 50V 250MA SOD80 Vishay General Semiconductor - Diodes Division |
8,267 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 50 V | 50 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
VSKE270-04DIODE GP 400V 270A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,314 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 400 V | 400 V | 270A | - | - | |
|
EGP20AHE3/54DIODE GEN PURP 50V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,639 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
EGP20BHE3/54DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,348 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
EGP20CHE3/54DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,855 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
HFA08TB120DIODE GEN PURP 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,336 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
|
EGP20DHE3/54DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,115 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 70pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 2A | -65°C ~ 150°C | 950 mV @ 2 A |
|
|
HFA06TB120DIODE GEN PURP 1.2KV 6A TO220AC Vishay General Semiconductor - Diodes Division |
3,567 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A | -55°C ~ 150°C | 3 V @ 6 A |
|
|
EGP20FHE3/54DIODE GEN PURP 300V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,489 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
|
EGP20GHE3/54DIODE GEN PURP 400V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,257 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 150°C | 1.25 V @ 2 A |
|
BYM07-200/32DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,106 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
IRD3909RDIODE GEN PURP 50V 30A DO203AB Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 80 µA @ 50 V | 50 V | 30A | -40°C ~ 125°C | 1.8 V @ 62.8 A | |
|
BYM10-1000/1DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
IRD3910RDIODE GEN PURP 100V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,237 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 80 µA @ 100 V | 100 V | 30A | -40°C ~ 125°C | 1.8 V @ 62.8 A | |
|
|
BYM10-400/1DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
EGP30A-E3/54DIODE GEN PURP 50V 3A GP20 Vishay General Semiconductor - Diodes Division |
2,482 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
|
|
EGP30AHE3/54DIODE GEN PURP 50V 3A GP20 Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 950 mV @ 3 A |
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