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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SF5401-TAPDIODE GEN PURP 100V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,144 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
VIT2080S-E3/4WDIODE SCHOTTKY 20A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
2,175 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A | |
|
|
SF5401-TRDIODE GEN PURP 100V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,066 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
SE20DB-M3/IDIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 100 V | 100 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
SE20DJ-M3/IDIODE GEN PURP 600V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,050 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 600 V | 600 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
SE20DD-M3/IDIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
2,717 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 200 V | 200 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
VS-20ETF12SLHM3DIODES - D2PAK-E3 Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A |
|
VS-8EWF12STR-M3DIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,532 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 270 ns | 100 µA @ 1200 V | 1200 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A | |
|
|
VS-20ETS12S-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
SE20DG-M3/IDIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 400 V | 400 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
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VS-APH3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
3,277 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 26 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.65 V @ 30 A |
|
VS-EPU3006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
2,420 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2 V @ 30 A |
|
VF10150S-E3/4WDIODE SCHOTTKY 150V 10A ITO220AB Vishay General Semiconductor - Diodes Division |
2,340 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
|
VS-16FR10DIODE GEN PURP 100V 16A DO203AA Vishay General Semiconductor - Diodes Division |
2,675 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 100 V | 100 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
|
SE12DGHM3/IDIODE GEN PURP 400V 3.2A TO263AC Vishay General Semiconductor - Diodes Division |
2,107 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 400 V | 400 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
V20120S-E3/4WDIODE SCHOTTKY 120V 20A TO220AB Vishay General Semiconductor - Diodes Division |
3,766 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
VS-30ETH06FP-N3DIODE GEN PURP 600V 30A TO220FP Vishay General Semiconductor - Diodes Division |
3,473 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
|
VT2080S-E3/4WDIODE SCHOTTKY 20A 80V TO-220AB Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A |
|
|
VS-6FR80DIODE GEN PURP 800V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,447 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 800 V | 800 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
VS-30EPH06L-N3DIODE GP 600V 30A TO247AD-2 Vishay General Semiconductor - Diodes Division |
3,688 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
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