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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP10-4003EHE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,480 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
|
RGP10DEHE3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,452 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
RMPG06G-E3/53DIODE GPP 1A 400V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,637 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
MSE1PJ-M3/89ADIODE GEN PURP 600V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
166,703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
GP10D-4003HE3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,822 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
|
RGP10DEHE3/91DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,755 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4004E-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
|
RGP10DE-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,283 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4004EHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,485 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
|
RGP10DHE3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,577 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10G-4004HE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,431 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | 1A | - | - | |
|
|
RGP10DHM3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,423 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4005-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,824 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | |
|
|
RGP10D-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,849 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4005E-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,772 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | |
|
|
RGP10G-E3/53DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,315 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10-4005EHE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,257 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | - | 600 V | 1A | - | - | |
|
|
RGP10GE-E3/53DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,340 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
GP10J-4005HE3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,930 | - |
RFQ |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 1A | - | - | ||
|
HFA08TB60SDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 55 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
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