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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GP10AHE3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,522 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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S1PAHE3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,625 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VS-60EPF12PBFDIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,560 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | ||
|
VS-E4TU2006FP-N3DIODE GEN PURP 600V 20A TO220-2 Vishay General Semiconductor - Diodes Division |
761 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 61 ns | 15 µA @ 600 V | 600 V | 20A | -55°C ~ 175°C | 1.63 V @ 20 A |
|
MBRF745-E3/45DIODE SCHOTTKY 45V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
830 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
VS-15EVU06-M3/IDIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division |
4,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 20 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A |
|
BYV29-400-E3/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
895 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
SS36HE3/9ATDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,933 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
GP10BEHE3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,840 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1PBHE3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,401 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
VS-60EPS08PBFDIODE GEN PURP 800V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,484 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 800 V | 800 V | 60A | -40°C ~ 150°C | 1.09 V @ 60 A | |
|
|
SS3H9HE3/9ATDIODE SCHOTTKY 90V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 20 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A |
|
|
GP10BHE3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1PDHE3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,318 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
VS-60EPS12PBFDIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,226 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | 1.09 V @ 60 A | |
|
|
VS-ETL0806-M3DIODE GEN PURP 600V 8A TO220-2 Vishay General Semiconductor - Diodes Division |
929 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 9 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.07 V @ 8 A |
|
|
SS3P3-E3/85ADIODE SCHOTTKY 30V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,205 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A |
|
|
GP10DEHE3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
S1PGHE3/84ADIODE GEN PURP 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,863 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
VS-60EPU06PBFDIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A |
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