Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MSS1P4-E3/89A

MSS1P4-E3/89A

DIODE SCHOTTKY 40V 1A MICROSMP

Vishay General Semiconductor - Diodes Division
2,664 -

RFQ

MSS1P4-E3/89A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 200 µA @ 40 V 40 V 1A -55°C ~ 150°C 550 mV @ 1 A
BY229B-400-E3/45

BY229B-400-E3/45

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,737 -

RFQ

BY229B-400-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.85 V @ 20 A
SUF30G-E3/54

SUF30G-E3/54

DIODE GEN PURP 400V 3A P600

Vishay General Semiconductor - Diodes Division
3,692 -

RFQ

SUF30G-E3/54

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.8 V @ 3 A
SE10PD-E3/84A

SE10PD-E3/84A

DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division
2,247 -

RFQ

SE10PD-E3/84A

Ficha técnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - 780 ns 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.05 V @ 1 A
AS1PB-M3/84A

AS1PB-M3/84A

DIODE AVALANCHE 100V 1.5A DO220

Vishay General Semiconductor - Diodes Division
2,161 -

RFQ

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 1.5 µs 5 µA @ 100 V 100 V 1.5A (DC) - 1.15 V @ 1.5 A
MSS1P5-E3/89A

MSS1P5-E3/89A

DIODE SCHOTTKY 50V 1A MICROSMP

Vishay General Semiconductor - Diodes Division
2,063 -

RFQ

MSS1P5-E3/89A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 40pF @ 4V, 1MHz - 150 µA @ 50 V 50 V 1A -55°C ~ 150°C 680 mV @ 1 A
BY229B-400HE3/45

BY229B-400HE3/45

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division
3,831 -

RFQ

BY229B-400HE3/45

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.85 V @ 20 A
SUF30J-E3/54

SUF30J-E3/54

DIODE GEN PURP 600V 3A P600

Vishay General Semiconductor - Diodes Division
3,347 -

RFQ

SUF30J-E3/54

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 35 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 2 V @ 3 A
SE10PG-E3/84A

SE10PG-E3/84A

DIODE GEN PURP 400V 1A DO220AA

Vishay General Semiconductor - Diodes Division
3,829 -

RFQ

SE10PG-E3/84A

Ficha técnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - 780 ns 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.05 V @ 1 A
AS1PB-M3/85A

AS1PB-M3/85A

DIODE AVALANCHE 100V 1.5A DO220

Vishay General Semiconductor - Diodes Division
3,107 -

RFQ

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 1.5 µs 5 µA @ 100 V 100 V 1.5A (DC) - 1.15 V @ 1.5 A
MSS1P6-E3/89A

MSS1P6-E3/89A

DIODE SCHOTTKY 60V 1A MICROSMP

Vishay General Semiconductor - Diodes Division
2,045 -

RFQ

MSS1P6-E3/89A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount 40pF @ 4V, 1MHz - 150 µA @ 60 V 60 V 1A -55°C ~ 150°C 680 mV @ 1 A
BY229B-600-E3/45

BY229B-600-E3/45

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,907 -

RFQ

BY229B-600-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 600 V 600 V 8A -40°C ~ 150°C 1.85 V @ 20 A
TVR06J-E3/54

TVR06J-E3/54

DIODE GEN PURP 600V 600MA DO204

Vishay General Semiconductor - Diodes Division
3,267 -

RFQ

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - - 600 V 600mA -65°C ~ 175°C 1.4 V @ 600 mA
AS3PDHM3/86A

AS3PDHM3/86A

DIODE AVALANCHE 200V 2.1A TO277A

Vishay General Semiconductor - Diodes Division
3,142 -

RFQ

AS3PDHM3/86A

Ficha técnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 200 V 200 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
BY229B-600HE3/45

BY229B-600HE3/45

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,120 -

RFQ

BY229B-600HE3/45

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 600 V 600 V 8A -40°C ~ 150°C 1.85 V @ 20 A
TVR06JHE3/54

TVR06JHE3/54

DIODE GEN PURP 600V 600MA DO204

Vishay General Semiconductor - Diodes Division
2,004 -

RFQ

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 600mA -65°C ~ 175°C 1.4 V @ 600 mA
AS3PDHM3/87A

AS3PDHM3/87A

DIODE AVALANCHE 200V 2.1A TO277A

Vishay General Semiconductor - Diodes Division
3,402 -

RFQ

AS3PDHM3/87A

Ficha técnica

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 200 V 200 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
BY229B-800-E3/45

BY229B-800-E3/45

DIODE GEN PURP 800V 8A TO263AB

Vishay General Semiconductor - Diodes Division
2,789 -

RFQ

BY229B-800-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 145 ns 10 µA @ 800 V 800 V 8A -40°C ~ 150°C 1.85 V @ 20 A
TVR10G-E3/54

TVR10G-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,364 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 300 ns - 400 V 1A -65°C ~ 175°C -
MBR10100-E3/4W

MBR10100-E3/4W

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division
735 -

RFQ

MBR10100-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -65°C ~ 150°C 800 mV @ 10 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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