+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RGP20DHE3/54DIODE GEN PURP 200V 2A GP20 Vishay General Semiconductor - Diodes Division |
2,868 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
GP10B-4002-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,130 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
GPP60B-E3/54DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
3,144 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
|
RGP20G-E3/54DIODE GEN PURP 400V 2A GP20 Vishay General Semiconductor - Diodes Division |
3,332 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A | |
|
|
GP10-4003E-E3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,834 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
GPP60BHE3/54DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
3,004 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
|
RGP20GHE3/54DIODE GEN PURP 400V 2A GP20 Vishay General Semiconductor - Diodes Division |
2,516 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
|
GP10-4003EHE3/53DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,864 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
GPP60D-E3/54DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
|
RGP20J-E3/54DIODE GEN PURP 600V 2A GP20 Vishay General Semiconductor - Diodes Division |
3,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A | |
|
|
GP10-4003EHM3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,626 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
GPP60DHE3/54DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
3,118 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
|
RGP20JHE3/54DIODE GEN PURP 600V 2A GP20 Vishay General Semiconductor - Diodes Division |
3,711 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.3 V @ 2 A |
|
|
GP10D-4003E-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
GPP60G-E3/54DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
2,191 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
RGP25BHE3/54DIODE GEN PURP 100V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,018 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
|
GP10-4003HM3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
GPP60GHE3/54DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
2,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 400 V | 400 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
|
RGP25KHE3/54DIODE GEN PURP 800V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,409 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
|
GP10D-4003-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,404 | - |
RFQ |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
