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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4006-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,887 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VIT2060GHM3/4WDIODE SCHOTTKY 60V 10A TO262AA Vishay General Semiconductor - Diodes Division |
3,529 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 700 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 900 mV @ 10 A |
|
|
1N4007-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,321 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
|
BAV21WS-HE3-18DIODE GEN PURP 200V 250MA SOD323 Vishay General Semiconductor - Diodes Division |
2,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA |
|
BYS11-90-E3/TR3DIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
GP30K-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 5 µs | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
V3F6HM3/H3A,60V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 310pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 3A | -40°C ~ 150°C | 620 mV @ 3 A |
|
FESB16DT-E3/81DIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,876 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
|
GP30G-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,950 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
|
V3FM15HM3/H3A,150V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
3,279 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 85 µA @ 150 V | 150 V | 3A | -40°C ~ 175°C | 1.24 V @ 3 A |
|
|
1N4937-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 600 V | 600 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A | |
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V2PL45LHM3/HSCHOTTKY RECTIFIER 2A 45V SMP Vishay General Semiconductor - Diodes Division |
3,537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 390pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 2A (DC) | -40°C ~ 150°C | 530 mV @ 2 A |
|
|
VS-20ETF02STRLPBFDIODE GEN PURP 200V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,955 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 60 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
VIT2080SHM3/4WDIODE SCHOTTKY 20A 80V TO-262AA Vishay General Semiconductor - Diodes Division |
3,100 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 700 µA @ 80 V | 80 V | 20A | -55°C ~ 150°C | 920 mV @ 20 A |
|
|
VS-20ETF02STRRPBFDIODE GEN PURP 200V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,248 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 60 ns | 100 µA @ 200 V | 200 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
SS14-61HE3J_B/HDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VIT3060GHM3/4WDIODE SCHOTTKY 60V 15A TO262AA Vishay General Semiconductor - Diodes Division |
2,132 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 850 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 730 mV @ 15 A |
|
VS-8EWX06FN-M3DIODE GEN PURP 600V 8A TO252 Vishay General Semiconductor - Diodes Division |
2,696 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 17 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
|
BA159-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,120 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 125°C | 1.3 V @ 1 A | |
|
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RS1JHE3_A/IDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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