Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-16FR60

VS-16FR60

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division
3,201 -

RFQ

VS-16FR60

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 600 V 600 V 16A -65°C ~ 175°C 1.23 V @ 50 A
IMBD4448-G3-18

IMBD4448-G3-18

DIODE GEN PURP 75V 150MA SOT23

Vishay General Semiconductor - Diodes Division
2,029 -

RFQ

IMBD4448-G3-18

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 2.5 µA @ 70 V 75 V 150mA 150°C (Max) 1 V @ 10 mA
FESB16JT-E3/45

FESB16JT-E3/45

DIODE GEN PURP 600V 16A TO263AB

Vishay General Semiconductor - Diodes Division
2,323 -

RFQ

FESB16JT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 145pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.5 V @ 16 A
VS-40HF20

VS-40HF20

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division
2,633 -

RFQ

VS-40HF20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 9 mA @ 200 V 200 V 40A -65°C ~ 190°C 1.3 V @ 125 A
IMBD4448-G3-08

IMBD4448-G3-08

DIODE GEN PURP 75V 150MA SOT23

Vishay General Semiconductor - Diodes Division
2,194 -

RFQ

IMBD4448-G3-08

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 2.5 µA @ 70 V 75 V 150mA 150°C (Max) 1 V @ 10 mA
VS-15ETH06FP-N3

VS-15ETH06FP-N3

DIODE GEN PURP 600V 15A TO220FP

Vishay General Semiconductor - Diodes Division
2,692 -

RFQ

VS-15ETH06FP-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 29 ns 40 µA @ 600 V 600 V 15A -65°C ~ 175°C 2.2 V @ 15 A
VS-HFA25TB60S-M3

VS-HFA25TB60S-M3

DIODE GEN PURP 600V 25A D2PAK

Vishay General Semiconductor - Diodes Division
2,143 -

RFQ

VS-HFA25TB60S-M3

Ficha técnica

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 20 µA @ 600 V 600 V 25A (DC) -55°C ~ 150°C 2 V @ 50 A
VS-ETH3006S-M3

VS-ETH3006S-M3

DIODE GEN PURP 600V 30A D2PAK

Vishay General Semiconductor - Diodes Division
3,473 -

RFQ

VS-ETH3006S-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 26 ns 30 µA @ 600 V 600 V 30A -65°C ~ 175°C 2.65 V @ 30 A
VS-16F120

VS-16F120

DIODE GEN PURP 1.2KV 16A DO203AA

Vishay General Semiconductor - Diodes Division
3,307 -

RFQ

VS-16F120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 12 mA @ 1200 V 1200 V 16A -65°C ~ 175°C 1.23 V @ 50 A
VS-ETU3006S-M3

VS-ETU3006S-M3

DIODE GEN PURP 600V 30A D2PAK

Vishay General Semiconductor - Diodes Division
3,617 -

RFQ

VS-ETU3006S-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 45 ns 30 µA @ 600 V 600 V 30A -65°C ~ 175°C 2 V @ 70 A
VS-60EPS16-M3

VS-60EPS16-M3

DIODE GEN PURP 1.6KV 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,629 -

RFQ

VS-60EPS16-M3

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1600 V 1600 V 60A -40°C ~ 150°C 1.15 V @ 60 A
VS-65EPF12LHM3

VS-65EPF12LHM3

DIODES - TO-247-E3

Vishay General Semiconductor - Diodes Division
3,887 -

RFQ

VS-65EPF12LHM3

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 65A -40°C ~ 150°C 1.42 V @ 65 A
BAV20WS-HG3-08

BAV20WS-HG3-08

DIODE GEN PURP 150V 250MA SOD323

Vishay General Semiconductor - Diodes Division
3,529 -

RFQ

BAV20WS-HG3-08

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
VS-60APU02-N3

VS-60APU02-N3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,526 -

RFQ

VS-60APU02-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 28 ns 50 µA @ 200 V 200 V 60A -55°C ~ 175°C 1.08 V @ 60 A
BAV20WS-HG3-18

BAV20WS-HG3-18

DIODE GEN PURP 150V 250MA SOD323

Vishay General Semiconductor - Diodes Division
3,519 -

RFQ

BAV20WS-HG3-18

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 250mA (DC) 150°C (Max) 1.25 V @ 200 mA
VS-E4PU3006L-N3

VS-E4PU3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division
3,594 -

RFQ

VS-E4PU3006L-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 65 ns 50 µA @ 600 V 600 V 30A -55°C ~ 175°C 1.6 V @ 30 A
VS-60EPU04-N3

VS-60EPU04-N3

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,135 -

RFQ

VS-60EPU04-N3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 85 ns 50 µA @ 400 V 400 V 60A -55°C ~ 175°C 1.25 V @ 60 A
FESF16DT-E3/45

FESF16DT-E3/45

DIODE GEN PURP 200V 16A ITO220AC

Vishay General Semiconductor - Diodes Division
3,614 -

RFQ

FESF16DT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 200 V 200 V 16A -65°C ~ 150°C 975 mV @ 16 A
VS-70HF40

VS-70HF40

DIODE GEN PURP 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division
2,172 -

RFQ

VS-70HF40

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 15 mA @ 400 V 400 V 70A -65°C ~ 150°C 1.35 V @ 220 A
VS-25F120

VS-25F120

DIODE GEN PURP 1.2KV 25A DO203AA

Vishay General Semiconductor - Diodes Division
3,860 -

RFQ

VS-25F120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 12 mA @ 1200 V 1200 V 25A -65°C ~ 175°C 1.3 V @ 78 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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