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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6479HE3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,358 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
UF4007-M3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,937 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SD103BW-G3-08DIODE SCHOTTKY 350MA 30V SOD123 Vishay General Semiconductor - Diodes Division |
2,677 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | |
|
|
BYM12-50-E3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,844 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N6480HE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SD103CW-G3-08DIODE SCHOTTKY 350MA 20V SOD123 Vishay General Semiconductor - Diodes Division |
2,243 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 10 V | 20 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA | |
|
V1FM10-M3/I1A 100V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division |
3,375 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 95pF @ 4V, 1MHz | - | 50 µA @ 100 V | 100 V | 1A | -40°C ~ 175°C | 770 mV @ 1 A |
|
MPG06B-E3/53DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,147 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
1N6481HE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,609 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V1FL45-M3/I1A 45V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division |
2,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 190pF @ 4V, 1MHz | - | 250 µA @ 60 V | 45 V | 1A | -40°C ~ 150°C | 530 mV @ 1 A |
|
|
MPG06D-E3/53DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,327 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
1N6482HE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
V1FM12-M3/I1A 120V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 95pF @ 4V, 1MHz | - | 65 µA @ 120 V | 120 V | 1A | -40°C ~ 175°C | 870 mV @ 1 A |
|
|
MPG06G-E3/53DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,212 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
1N6483HE3/97DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,434 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
UF1005-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,369 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 180°C | 1.7 V @ 1 A | ||
|
|
V1FM12-M3/H1A 120V SMF TRENCH SKY RECT Vishay General Semiconductor - Diodes Division |
3,109 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 95pF @ 4V, 1MHz | - | 65 µA @ 120 V | 120 V | 1A | -40°C ~ 175°C | 870 mV @ 1 A |
|
|
MPG06J-E3/53DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,813 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
1N6484HE3/97DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,739 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
UF1006-M3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,060 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 180°C | 1.7 V @ 1 A |
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