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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MURS240-M3/5BTDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,134 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.45 V @ 2 A | |
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SS1P5L-M3/85ADIODE SCHOTTKY 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,567 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 590 mV @ 1 A |
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SS26-M3/52TDIODE SCHOTTKY 2A 60V DO-214AA Vishay General Semiconductor - Diodes Division |
2,079 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A | |
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MURS260-M3/5BTDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,728 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.45 V @ 2 A | |
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SS1P6L-M3/85ADIODE SCHOTTKY 60V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,947 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 590 mV @ 1 A |
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B350B-E3/5BTDIODE SCHOTTKY 50V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 660 mV @ 3 A | |
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MURS340S-M3/5BTDIODE GEN PURP 400V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,078 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
|
BYG20D-M3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
2,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
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MURS360S-M3/5BTDIODE GEN PURP 600V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,299 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
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GL34GHE3/83DIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
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MURS120HE3_A/HDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A |
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BYG20G-M3/TR3DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
2,827 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
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MURS140-M3/52TDIODE GEN PURP 400V 1A DO214AA Vishay General Semiconductor - Diodes Division |
3,880 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
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GL34JHE3/83DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,919 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
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MURS140HE3_A/IDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,957 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A |
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BYG20J-M3/TR3DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
2,240 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A | |
|
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MURS240-M3/52TDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,409 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | -65°C ~ 175°C | 1.45 V @ 2 A | |
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GL34AHE3/98DIODE GEN PURP 50V 500MA DO213AA Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 50 V | 50 V | 500mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
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MURS160HE3_A/IDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 2A | -65°C ~ 175°C | 1.25 V @ 1 A |
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BYG21K-M3/TR3DIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division |
2,638 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
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