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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UG4C-E3/54DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,911 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
RS1AHE3_A/IDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,085 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4C-M3/54DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,694 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
VS-4ESH02-M3/86ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,614 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
RS1BHE3_A/HDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4D-M3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,740 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
S2KHE3_A/IDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,350 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
RS1BHE3_A/IDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,308 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
V8PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,268 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1150pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 8A | -40°C ~ 175°C | 640 mV @ 8 A |
|
SB1H90-E3/73DIODE SCHOTTKY 90V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,415 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 µA @ 90 V | 90 V | 1A | 175°C (Max) | 770 mV @ 1 A | |
|
|
SE40PBHM3_A/IDIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,123 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
|
RS1DHE3_A/HDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SE40PDHM3_A/IDIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,847 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 200 V | 200 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
|
RS1DHE3_A/IDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,903 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SE40PGHM3_A/IDIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,116 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 200 V | 200 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
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RS1KHE3_A/HDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,562 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SE40PJHM3_A/IDIODE GEN PURP 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,965 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
|
RS1KHE3_A/IDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,641 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SE40PBHM3_A/HDIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,732 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
|
SS1H10-M3/5ATDIODE SCHOTTKY 1A 100V DO-214AC Vishay General Semiconductor - Diodes Division |
2,413 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 860 mV @ 2 A |
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