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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYW53-TAPDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,980 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
BYW52-TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,601 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
ES2B-M3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
BYX82TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
SSA23LHE3_A/IDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,171 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 450 mV @ 2 A |
|
|
ES2C-M3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,861 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
SS33-E3/9ATDIODE SCHOTTKY 30V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,280 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
BYT51A-TRDIODE AVALANCHE 50V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,818 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 50 V | 50 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
V10P8-M3/86ADIODE SCHOTTKY 80V 3.9A TO277A Vishay General Semiconductor - Diodes Division |
3,248 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 80 V | 80 V | 3.9A | -40°C ~ 150°C | 680 mV @ 10 A |
|
|
VSSA210-E3/5ATDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
3,787 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A | -40°C ~ 150°C | 700 mV @ 2 A |
|
|
ES2D-M3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
SS3P5L-M3/87ADIODE SCHOTTKY 50V 3A TO277A Vishay General Semiconductor - Diodes Division |
3,375 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
|
BYT51B-TRDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,109 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
V10P8-M3/87ADIODE SCHOTTKY 80V 3.9A TO277A Vishay General Semiconductor - Diodes Division |
3,421 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 800 µA @ 80 V | 80 V | 3.9A | -40°C ~ 150°C | 680 mV @ 10 A |
|
1N6478HE3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,775 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYW53-TRDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,268 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
1N6479HE3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,338 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
SS35-E3/9ATDIODE SCHOTTKY 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
BYX82TRDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,176 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
1N6480HE3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,236 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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