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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V2FM10-M3/H2A,100V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,677 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 150pF @ 4V, 1MHz | - | 55 µA @ 100 V | 100 V | 2A | -40°C ~ 175°C | 830 mV @ 2 A |
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MCL103B-TRDIODE SCHOTTKY 30V 200MA MICMELF Vishay General Semiconductor - Diodes Division |
2,452 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 5 µA @ 20 V | 30 V | 200mA | 125°C (Max) | 600 mV @ 200 mA |
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SE10FD-M3/HDIODE GEN PURP 200V 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,946 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 780 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
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V2PM12L-M3/HSCHOTTKY RECTIFIER 2A 120V SMP Vishay General Semiconductor - Diodes Division |
2,083 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 200 µA @ 120 V | 120 V | 1.8A (DC) | -40°C ~ 175°C | 620 mV @ 1 A |
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MPG06M-E3/54DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,838 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SE20PJ-M3/85ADIODE GEN PURP 600V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,941 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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V2FL45HM3/H2A,45V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 570 µA @ 45 V | 45 V | 2A | -40°C ~ 150°C | 560 mV @ 2 A |
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SE20PD-M3/84ADIODE GEN PURP 200V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,190 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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GP10W-E3/73DIODE GEN PURP 1.5KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,128 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 4V, 1MHz | 3 µs | 5 µA @ 1500 V | 1500 V | 1A | -65°C ~ 150°C | 1.3 V @ 1 A |
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SE20PG-M3/84ADIODE GEN PURP 400V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,070 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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SS1P5L-M3/84ADIODE SCHOTTKY 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 590 mV @ 1 A |
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VS-85HF80MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,982 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-50PF40WDIODE GEN PURP 400V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 400 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
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VS-85HFR10MDIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,799 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 100 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-85HFR120MDIODE GEN PURP 1.2KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,368 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-85HFR40MDIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,027 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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UG1A-M3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,696 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
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UG1B-M3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,416 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
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UG1C-M3/54DIODE GEN PURP 150V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,630 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | ||
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UG1D-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,822 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 7pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
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