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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4150W-HE3-18DIODE GEN PURP 50V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,253 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -55°C ~ 150°C | 1 V @ 200 mA |
|
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1N4151W-HE3-18DIODE GEN PURP 50V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
2,002 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -55°C ~ 150°C | 1 V @ 50 mA |
|
B350B-E3/52TDIODE SCHOTTKY 50V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 660 mV @ 3 A | |
|
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1N4448W-HE3-18DIODE GEN PURP 75V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
2,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 720 mV @ 5 mA |
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1N4448WS-HE3-18DIODE GEN PURP 75V 150MA SOD323 Vishay General Semiconductor - Diodes Division |
2,459 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 5 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 720 mV @ 5 mA |
|
|
BAS16D-HE3-18DIODE GEN PURP 75V 250MA SOD123 Vishay General Semiconductor - Diodes Division |
3,869 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA |
|
|
1N4151W-HE3-08DIODE GEN PURP 50V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
3,374 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -55°C ~ 150°C | 1 V @ 50 mA |
|
B360A-M3/5ATDIODE SCHOTTKY 60V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,282 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
VS-12FL60S02DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,041 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 600 V | 600 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
BYG10M-M3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
3,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
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BYG10M-M3/TRDIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
3,758 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
BYG20DHM3_A/HDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,058 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
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BYG20DHM3_A/IDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,269 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
|
BYG20GHM3_A/HDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,586 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
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BYG20GHM3_A/IDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,719 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
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BYG20JHM3_A/HDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
VS-HFA30PB120HN3DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 170 ns | 40 µA @ 1200 V | 1200 V | 30A | -55°C ~ 150°C | 4.1 V @ 30 A |
|
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BYG20JHM3_A/IDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,189 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
|
BYG21KHM3_A/HDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
|
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BYG21KHM3_A/IDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
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