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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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U1B-M3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,868 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6.8pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
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V8PM6HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,072 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1150pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 8A | -40°C ~ 175°C | 640 mV @ 8 A |
|
RS3AHE3_A/IDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
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RS3BHE3_A/IDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,615 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
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RS3DHE3_A/IDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
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RS3GHE3_A/IDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A |
|
SS1FH6-M3/IDIODE SCHOTTKY 60V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,552 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 1A | -55°C ~ 175°C | 700 mV @ 1 A | |
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SS2FH6-M3/IDIODE SCHOTTKY 60V 2A DO219AB Vishay General Semiconductor - Diodes Division |
2,903 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 780 mV @ 2 A | |
|
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SS2FH6-M3/HDIODE SCHOTTKY 60V 2A DO219AB Vishay General Semiconductor - Diodes Division |
2,191 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 780 mV @ 2 A |
|
VS-T40HF120DIODE GEN PURP 1.2KV 40A D-55 Vishay General Semiconductor - Diodes Division |
2,194 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 15 mA @ 1200 V | 1200 V | 40A | - | - | |
|
VS-85HFR80DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,221 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 800 V | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-87HF80DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,520 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
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VS-87HFR80DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,408 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-71HFR100DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,612 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
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VS-150U60DDIODE GEN PURP 600V 150A DO205AA Vishay General Semiconductor - Diodes Division |
2,838 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 600 V | 150A | -40°C ~ 180°C | 1.47 V @ 600 A | |
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RS1PB-M3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,234 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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RS1PJ-M3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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V2F6-M3/I2A,60V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
3,260 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 480 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 600 mV @ 2 A |
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VS-88HF100DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,870 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1000 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-88HFR100DIODE GEN PURP 1KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,389 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A |
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