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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDLL6857ZENER DIODE Microchip Technology |
3,946 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4.5pF @ 0V, 1MHz | - | 150 nA @ 16 V | 16 V | 150mA | -65°C ~ 150°C | 750 mV @ 35 mA | |
|
|
1N6638USDIODE GEN PURPOSE Microchip Technology |
3,903 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
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|
TSN525M60 S3GDIODE SCHOTTKY 60V 25A 8PDFN Taiwan Semiconductor Corporation |
3,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 25A | -55°C ~ 150°C | 630 mV @ 25 A | |
|
1N5614US/TRSTD RECTIFIER Microchip Technology |
3,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JAN1N5619USDIODE GEN PURP 600V 1A D5A Microchip Technology |
2,673 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 12V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
UPR30E3/TR7DIODE GEN PURP 300V 2A POWERMITE Microchip Technology |
2,336 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.25 V @ 1 A | |
|
|
S70YDIODE GEN PURP 1.6KV 70A DO5 GeneSiC Semiconductor |
3,660 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1600 V | 70A | -65°C ~ 150°C | 1.1 V @ 70 A | |
|
|
VS-95PFR140DIODE GEN PURP 1.4KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
3,295 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
|
MPL-1036SVRDIODE GEN PURP 600V 3A TO263 Sanken |
3,492 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.75 V @ 3 A | |
|
VS-60APU06HN3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,578 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 81 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.68 V @ 60 A |
|
JANTXV1N4246/TRRECTIFIER UFR,FRR Microchip Technology |
3,414 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
FSQS30A045DIODE SCHOTTKY 45V 30A TO-220 2P KYOCERA AVX |
2,333 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 560 mV @ 30 A | |
|
|
S70YRDIODE GEN PURP REV 1.6KV 70A DO5 GeneSiC Semiconductor |
3,425 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1600 V | 70A | -65°C ~ 150°C | 1.1 V @ 70 A | |
|
JANTX1N4248DIODE GEN PURP 800V 1A E3 Microchip Technology |
2,125 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | - | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
MPL-1036SDIODE GEN PURP 600V 3A TO263 Sanken |
2,349 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Last Time Buy | Surface Mount | - | 50 ns | 50 µA @ 600 V | 600 V | 3A | -40°C ~ 150°C | 1.75 V @ 3 A | |
|
|
VS-90APF06L-M3RECTIFIER DIODE 90A 600V TO-247A Vishay General Semiconductor - Diodes Division |
3,370 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 190 ns | 100 µA @ 600 V | 600 V | 90A | -40°C ~ 150°C | 1.3 V @ 90 A | |
|
FFSH10120A-F0851200V 10A AUTO SIC SBD onsemi |
3,803 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 612pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 17A (DC) | -55°C ~ 175°C | - |
|
VS-8TQ080SHM3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
|
1N5807DIODE GEN PURP 50V 6A AXIAL Semtech Corporation |
3,127 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 5V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 6A | - | 875 mV @ 4 A | |
|
|
1N6642DIODE GEN PURPOSE Microchip Technology |
2,913 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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