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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5822/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,403 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/620 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A |
|
JANS1N5802URSRECTIFIER DIODE Microchip Technology |
3,129 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | - | 50 V | 2A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
|
JANS1N5804URSRECTIFIER DIODE Microchip Technology |
3,325 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | - | 100 V | 2A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
|
JANS1N5806URSRECTIFIER DIODE Microchip Technology |
3,535 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | - | 150 V | 2A | -65°C ~ 175°C | 975 mV @ 2.5 A | |
|
|
JANTX1N5188DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
3,897 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/424 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 2 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
JANTXV1N5621DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
3,660 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 12V, 1MHz | 300 ns | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
JANTXV1N6639DIODE GEN PURP 75V 300MA AXIAL Microchip Technology |
2,458 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 500 mA |
|
|
JANTXV1N6641DIODE GEN PURP 50V 300MA AXIAL Microchip Technology |
3,763 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 ns | 100 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA |
|
|
JANTXV1N6643DIODE GEN PURP 75V 300MA AXIAL Microchip Technology |
3,333 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
JANTXV1N6640SWITCHING DIODE Microchip Technology |
2,883 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
1N6625DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology |
2,783 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 10V, 1MHz | 60 ns | 1 µA @ 1100 V | 1100 V | 1A | -65°C ~ 150°C | 1.75 V @ 1 A | |
|
1N6626USDIODE GEN PURP 220V 1.75A A-MELF Microchip Technology |
2,923 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 220 V | 220 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
JAN1N3595AUR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
2,487 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 3 µs | 2 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA |
|
|
1N6631/TRRECTIFIER UFR,FRR Microchip Technology |
2,944 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 60 ns | 4 µA @ 1.1 V | 1.1 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
JAN1N5802USDIODE GEN PURP 50V 2.5A D5A Microchip Technology |
3,555 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 50 V | 50 V | 2.5A | -65°C ~ 175°C | 975 mV @ 2.5 A |
|
|
1N6544/TRRECTIFIER UFR,FRR Microchip Technology |
3,049 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
JANTX1N5417USDIODE GEN PURP 200V 3A D5B Microchip Technology |
3,932 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
JANTX1N5418USDIODE GEN PURP 400V 3A D5B Microchip Technology |
3,277 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 2 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
UFR7010RRECTIFIER Microchip Technology |
3,427 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | 300pF @ 10V, 1MHz | 50 ns | 25 µA @ 100 V | 100 V | 70A | -65°C ~ 175°C | 975 mV @ 70 A | |
|
JANTX1N3070-1DIODE GEN PURP 175V 100MA DO7 Microchip Technology |
2,377 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/169 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 50 ns | 100 nA @ 175 V | 175 V | 100mA | -65°C ~ 175°C | 1 V @ 100 mA |
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