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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5307UR-1/TRCURRENT REGULATOR Microchip Technology |
2,684 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
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|
UFS320J/TR13DIODE GEN PURP 200V 3A DO214AB Microchip Technology |
3,795 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 950 mV @ 3 A | |
|
1N458A/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 1 µA @ 150 V | 150 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA | |
|
UES1106E3/TRRECTIFIER UFR,FRR Microchip Technology |
3,080 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N6076USDIODE GEN PURP 50V 6A D5B Microchip Technology |
3,351 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 5 µA @ 50 V | 50 V | 6A | -65°C ~ 155°C | 1.76 V @ 18.8 A | |
|
|
UFS330J/TR13DIODE GEN PURP 300V 3A DO214AB Microchip Technology |
3,514 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
1N6077USDIODE GEN PURP 100V 6A D5B Microchip Technology |
2,547 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 5 µA @ 100 V | 100 V | 6A | -65°C ~ 155°C | 1.76 V @ 18.8 A | |
|
|
UFS340J/TR13DIODE GEN PURP 400V 3A DO214AB Microchip Technology |
2,453 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
JANTXV1N5190DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
2,943 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/297 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 2 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
JANTXV1N6628DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology |
3,194 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 660 V | 660 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A |
|
|
1N5711UBSCHOTTKY DIODE Microchip Technology |
3,423 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 33mA (DC) | -65°C ~ 150°C | 1 V @ 15 mA |
|
|
UFS350J/TR13DIODE GEN PURP 500V 3A DO214AB Microchip Technology |
2,289 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
JANTXV1N5617US/TRRECTIFIER UFR,FRR Microchip Technology |
3,473 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
UES1102/TRRECTIFIER UFR,FRR Microchip Technology |
2,369 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 975 mV @ 2 A | ||
|
|
1N5712UBSCHOTTKY DIODE Microchip Technology |
3,428 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UFS360J/TR13DIODE GEN PURP 600V 3A DO214AB Microchip Technology |
2,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
JAN1N3645DIODE GEN PURP 1.4KV 250MA AXIAL Microchip Technology |
2,854 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1400 V | 1400 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA |
|
|
JANTXV1N6626DIODE GEN PURP 220V 1.75A AXIAL Microchip Technology |
3,314 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 220 V | 220 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A |
|
|
UFS370J/TR13DIODE GEN PURP 700V 3A DO214AB Microchip Technology |
3,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 700 V | 700 V | 3A | -55°C ~ 175°C | 1.2 V @ 3 A | |
|
|
JAN1N3646DIODE GP 1.75KV 250MA AXIAL Microchip Technology |
2,317 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/279 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 1750 V | 1750 V | 250mA | -65°C ~ 175°C | 5 V @ 250 mA |
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