Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JANTXV1N6623/TR

JANTXV1N6623/TR

RECTIFIER UFR,FRR

Microchip Technology
2,226 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 500 nA @ 880 V 880 V 1A -65°C ~ 150°C 1.55 V @ 1 A
JANTXV1N6621/TR

JANTXV1N6621/TR

RECTIFIER UFR,FRR

Microchip Technology
3,986 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 500 nA @ 440 V 440 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
JANTXV1N1188

JANTXV1N1188

DIODE GEN PURP 400V 35A DO203AB

Microchip Technology
2,310 -

RFQ

JANTXV1N1188

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 400 V 400 V 35A -65°C ~ 175°C 1.4 V @ 110 A
JANTXV1N6627/TR

JANTXV1N6627/TR

RECTIFIER UFR,FRR

Microchip Technology
2,265 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 10V, 1MHz 30 ns 2 µA @ 440 V 440 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
JANTXV1N1188R

JANTXV1N1188R

DIODE GEN PURP 400V 35A DO203AB

Microchip Technology
3,342 -

RFQ

JANTXV1N1188R

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 400 V 400 V 35A -65°C ~ 175°C 1.4 V @ 110 A
JANTXV1N1190R

JANTXV1N1190R

DIODE GEN PURP 600V 35A DO203AB

Microchip Technology
2,517 -

RFQ

JANTXV1N1190R

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 600 V 600 V 35A -65°C ~ 175°C 1.4 V @ 110 A
1N5314

1N5314

CURRENT REGULATOR DIODE

Microchip Technology
3,946 -

RFQ

Bulk RoHS - - Active Through Hole - - - - - - -
JANTXV1N3766R

JANTXV1N3766R

DIODE GEN PURP 800V 35A DO203AB

Microchip Technology
2,734 -

RFQ

JANTXV1N3766R

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 800 V 800 V 35A -65°C ~ 175°C 1.4 V @ 110 A
1N5314-1E3

1N5314-1E3

CURRENT REGULATOR DIODE

Microchip Technology
3,245 -

RFQ

Bulk RoHS - - Active Through Hole - - - - - - -
JANTXV1N3768R

JANTXV1N3768R

DIODE GEN PURP 1KV 35A DO203AB

Microchip Technology
2,759 -

RFQ

JANTXV1N3768R

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 1000 V 1000 V 35A -65°C ~ 175°C 1.4 V @ 110 A
1N5711UBCC

1N5711UBCC

SCHOTTKY DIODE

Microchip Technology
3,015 -

RFQ

1N5711UBCC

Ficha técnica

Bulk Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 200 nA @ 50 V 50 V 33mA (DC) -65°C ~ 150°C 1 V @ 15 mA
1N5314-1/TR

1N5314-1/TR

CURRENT REGULATOR

Microchip Technology
3,098 -

RFQ

1N5314-1/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 100 V 5.17A -65°C ~ 175°C 2.9 V @ 3.76 A
1N5712UBCC

1N5712UBCC

SCHOTTKY DIODE

Microchip Technology
3,861 -

RFQ

1N5712UBCC

Ficha técnica

Bulk Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 150 nA @ 16 V 16 V 75mA (DC) -65°C ~ 150°C 1 V @ 35 mA
1N5314/TR

1N5314/TR

CURRENT REGULATOR

Microchip Technology
3,337 -

RFQ

1N5314/TR

Ficha técnica

Tape & Reel (TR) RoHS - - Active Through Hole - - - - - - -
1N6392

1N6392

DIODE SCHOTTKY 45V 54A DO5

Microchip Technology
3,503 -

RFQ

1N6392

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Chassis, Stud Mount 3000pF @ 5V, 1MHz - 2 mA @ 45 V 45 V 54A -55°C ~ 175°C 820 mV @ 120 A
JANS1N5552

JANS1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology
2,204 -

RFQ

JANS1N5552

Ficha técnica

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.2 V @ 9 A
JAN1N5311-1/TR

JAN1N5311-1/TR

CURRENT REGULATOR

Microchip Technology
3,956 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JAN1N3766

JAN1N3766

DIODE GEN PURP 800V 35A DO203AB

Microchip Technology
3,316 -

RFQ

JAN1N3766

Ficha técnica

Bulk Military, MIL-PRF-19500/297 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 800 V 800 V 35A -65°C ~ 175°C 1.4 V @ 110 A
JANS1N6642UBCA

JANS1N6642UBCA

SWITCHING DIODE

Microchip Technology
3,872 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active - 5pF @ 0V, 1MHz 20 ns - - - - 1.2 V @ 100 mA
JANS1N5550

JANS1N5550

RECTIFIER DIODE

Microchip Technology
3,411 -

RFQ

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs - 200 V 5A -65°C ~ 175°C 1.2 V @ 9 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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