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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-3EJH01HM3/6B DIODE GEN PURP 100V 3A DO221AC Vishay General Semiconductor - Diodes Division	131	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	2 µA @ 100 V	100 V	3A	-65°C ~ 175°C	930 mV @ 3 A
SCS215AGC17 DIODE SCHOTTKY 650V 15A TO220AC Rohm Semiconductor	2,866	-	RFQ		Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	550pF @ 1V, 1MHz	0 ns	300 µA @ 600 V	650 V	15A (DC)	175°C	1.55 V @ 15 A
ES2DHE3_A/I DIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division	120	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	18pF @ 4V, 1MHz	20 ns	10 µA @ 200 V	200 V	2A	-55°C ~ 150°C	900 mV @ 2 A
VS-HFA06PB120-N3 DIODE GEN PURP 1.2KV 6A TO247AC Vishay General Semiconductor - Diodes Division	3,854	-	RFQ	Ficha técnica	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	80 ns	5 µA @ 1200 V	1200 V	6A	-55°C ~ 150°C	3 V @ 6 A
BYM13-20-E3/96 DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division	118	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	1A	-55°C ~ 125°C	500 mV @ 1 A
MSC030SDA070B DIODE SCHOTTKY 700V TO-247 Microchip Technology	2,019	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1200pF @ 1V, 1MHz	0 ns	200 µA @ 700 V	700 V	60A (DC)	-55°C ~ 175°C	1.8 V @ 30 A
1N5553 DIODE GEN PURP 800V 3A AXIAL Microchip Technology	2,599	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 800 V	800 V	3A	-65°C ~ 175°C	1.2 V @ 9 A
C3D10065I DIODE SCHOTTKY 650V 10A TO220-2 Wolfspeed, Inc.	2,673	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	480pF @ 0V, 1MHz	0 ns	50 µA @ 650 V	650 V	19A (DC)	-55°C ~ 175°C	-
1N2159 DO5 40 AMP SILICON RECTFIER Solid State Inc.	3,700	-	RFQ		Box		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 500 V	500 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
VS-HFA15TB60SR-M3 DIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division	3,559	-	RFQ	Ficha técnica	Tape & Reel (TR)	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	10 µA @ 600 V	600 V	15A (DC)	-55°C ~ 150°C	2 V @ 30 A
1N7052UR-1 SCHOTTKY RECTIFIER Microchip Technology	2,579	-	RFQ		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
S16GR DIODE GEN PURP 400V 16A DO220AA GeneSiC Semiconductor	2,219	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	16A	-65°C ~ 175°C	1.1 V @ 16 A
VS-15ETH06HN3 DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division	3,358	-	RFQ	Ficha técnica	Tape & Reel (TR)	FRED Pt®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 600 V	600 V	15A	-65°C ~ 175°C	2.2 V @ 15 A
FR30M05 DIODE GEN PURP 1KV 30A DO5 GeneSiC Semiconductor	2,134	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 800 V	1000 V	30A	-40°C ~ 125°C	1 V @ 30 A
JAN1N5616US DIODE GEN PURP 400V 1A D5A Microchip Technology	2,595	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	2 µs	500 nA @ 400 V	400 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-30ETH06-1-M3 DIODE ULTRA FAST 600V 30A TO262 Vishay General Semiconductor - Diodes Division	2,573	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.6 V @ 30 A
1N7053UR-1 SCHOTTKY RECTIFIER Microchip Technology	3,079	-	RFQ		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
S16J DIODE GEN PURP 600V 16A DO203AA GeneSiC Semiconductor	3,677	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	16A	-65°C ~ 175°C	1.1 V @ 16 A
VS-ETL1506STRL-M3 DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division	3,149	-	RFQ	Ficha técnica	Tape & Reel (TR)	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	210 ns	15 µA @ 600 V	600 V	15A	-65°C ~ 175°C	1.07 V @ 15 A
IDW32G65C5BXKSA2 DIODE SCHOTTKY 650V 16A TO247-3 Infineon Technologies	2,715	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	470pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	16A (DC)	-55°C ~ 175°C	1.7 V @ 16 A