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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSS1P4-M3/89ADIODE SCHOTTKY 40V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
3,194 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A |
|
1N914_NLDIODE ZENER Rochester Electronics, LLC |
3,697 | - |
RFQ |
Ficha técnica |
Bulk | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -55°C ~ 175°C | 1 V @ 10 mA |
|
FESB8JTHE3_A/IDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,532 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
|
JANTX1N6641DIODE GEN PURP 50V 300MA AXIAL Microchip Technology |
3,289 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 ns | 100 µA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1.1 V @ 300 mA |
|
VS-8ETL06SHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
2,846 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
|
JANTXV1N5416USDIODE GEN PURP 100V 3A D5B Microchip Technology |
2,365 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
JANTX1N6642U/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,287 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
FESB8FTHE3_A/PDIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,340 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
JANTX1N5809USDIODE GEN PURP 100V 3A B-MELF Microchip Technology |
2,839 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
VS-MBRB1635TRL-M3DIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | ||
|
|
1N6642UBCADIODE GEN PURPOSE Microchip Technology |
2,348 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
JANTX1N6642US/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,224 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 5 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
FESB8GTHE3_A/PDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,073 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
VS-25F100MDIODE GEN PURP 1KV 25A DO203AA Vishay General Semiconductor - Diodes Division |
3,694 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1000 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
|
1N6677UR-1/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
3,251 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 40 V | 40 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | ||
|
|
VS-MBRB1635TRR-M3DIODE SCHOTTKY 35V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,172 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | ||
|
|
1N6642UBCCDIODE GEN PURPOSE Microchip Technology |
2,109 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
JANTX1N6643USDIODE GEN PURP 125V 300MA D5D Microchip Technology |
3,030 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 6 ns | 50 nA @ 20 V | 125 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
|
FESB8HTHE3_A/PDIODE GEN PURP 500V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,821 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
|
VS-25F10MDIODE GEN PURP 100V 25A DO203AA Vishay General Semiconductor - Diodes Division |
3,016 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 100 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A |
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