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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5553US/TRRECTIFIER UFR,FRR Microchip Technology |
2,372 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.3 V @ 9 A | |
|
FCF10A40DIODE FAST RECOVERY 400V 10A TO- KYOCERA AVX |
3,549 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.25 V @ 5 A | |
|
MB10H100HE3_B/PDIODE SCHOTTKY 100V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,627 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A |
|
|
FR30DR02DIODE GEN PURP REV 200V 30A DO5 GeneSiC Semiconductor |
2,488 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 200 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
|
LSIC2SD120D15ASIC SCHOTTKY DIODE 1200V 15A TO2 Littelfuse Inc. |
2,558 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
VS-16FR80MDIODE GEN PURP 800V 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,329 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A | |
|
|
JAN1N5552US/TRRECTIFIER UFR,FRR Microchip Technology |
2,969 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
JAN1N4454-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,858 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/144 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -55°C ~ 175°C | 1 V @ 10 mA | |
|
TSUP10M45SH S1G10A, 45V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
3,382 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1099pF @ 4V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A (DC) | -55°C ~ 175°C | 600 mV @ 10 A |
|
|
FR30JR02DIODE GEN PURP REV 600V 30A DO5 GeneSiC Semiconductor |
2,339 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 600 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
JANTXV1N5554/TRSTD RECTIFIER Microchip Technology |
3,547 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1 V | 1000 V | 5A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
VS-40HFL10S02DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,719 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
JANTX1N5550USDIODE GEN PURP 200V 5A B-MELF Microchip Technology |
2,953 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 200 V | 200 V | 5A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
1N4151/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,607 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 2 ns | 50 nA @ 50 V | 75 V | 200mA | -65°C ~ 150°C | 1 V @ 50 mA | ||
|
|
NRTS3060MFST3G60V30A TRENCH SCHOTTKY onsemi |
2,176 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3140pF @ 1V, 1MHz | - | 100 µA @ 60 V | 60 V | 30A (DC) | -55°C ~ 175°C | 600 mV @ 30 A | |
|
|
FR30KR05DIODE GEN PURP REV 800V 30A DO5 GeneSiC Semiconductor |
3,058 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 800 V | 800 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
|
VS-71HF80DIODE GEN PURP 800V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,762 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 800 V | 800 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
VS-85HF10DIODE GEN PURP 100V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,639 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 100 V | 100 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-71HF100DIODE GEN PURP 1KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,906 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
JAN1N4150-1/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,615 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/231 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -65°C ~ 175°C | 1 V @ 200 mA |
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