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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RU 3MV1DIODE GEN PURP 400V 1.5A AXIAL Sanken |
2,726 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1.5A | -40°C ~ 150°C | 1.1 V @ 1.5 A | |
|
UF5405-E3/73DIODE GEN PURP 500V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,830 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
VS-8TQ080STRLHM3DIODE SCHOTTKY 80V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
VS-30WQ04FNTRRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,373 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 189pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 3.5A | -40°C ~ 150°C | 530 mV @ 3 A |
|
VS-10ETF02-M3DIODE GEN PURP 200V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,945 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
1N485B/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,608 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 180 V | 180 V | 200mA | -65°C ~ 200°C | 1 V @ 100 mA | ||
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SJPL-L4VDIODE GEN PURP 400V 3A SJP Sanken |
2,205 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.3 V @ 3 A | |
|
V10P12-M3/87ADIODE SCHOTTKY 10A 120V TO-277A Vishay General Semiconductor - Diodes Division |
3,200 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A | |
|
|
VS-10TQ045STRRHM3DIODE SCHOTTKY 45V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,384 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 900pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A |
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|
TSN520M60DIODE SCHOTTKY 60V 20A 8PDFN Taiwan Semiconductor Corporation |
3,321 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 20A | -55°C ~ 150°C | 580 mV @ 20 A | |
|
|
VS-10ETF06-M3DIODE GEN PURP 600V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,451 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 200 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
VS-40EPS08-M3DIODE GEN PURP 800V 40A TO247AC Vishay General Semiconductor - Diodes Division |
2,295 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 40A | -40°C ~ 150°C | 1 V @ 20 A | |
|
ES3FHE3_A/HDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,122 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
V10P12-M3/86ADIODE SCHOTTKY 10A 120V TO-277A Vishay General Semiconductor - Diodes Division |
3,726 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 120 V | 120 V | 10A | -40°C ~ 150°C | 820 mV @ 10 A |
|
|
VS-8TQ100STRLHM3DIODE SCHOTTKY 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 100 V | 8A | -55°C ~ 175°C | 720 mV @ 8 A |
|
NRVB30H100MFST3GDIODE SCHOTTKY 100V 30A 5DFN onsemi |
2,130 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 900 mV @ 30 A | |
|
|
VS-10ETF10-M3DIODE GEN PURP 1KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 310 ns | 100 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.33 V @ 10 A | |
|
JANTX1N4150-1DIODE GEN PURP 50V 300MA DO35 MACOM Technology Solutions |
3,661 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/231 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 740 mV @ 10 mA |
|
|
SJPL-L4DIODE GEN PURP 400V 3A SJP Sanken |
2,945 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 50 µA @ 400 V | 400 V | 3A | -40°C ~ 150°C | 1.3 V @ 3 A | |
|
SE10DD-M3/IDIODE GEN PURP 200V 3A TO263AC Vishay General Semiconductor - Diodes Division |
3,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 67pF @ 4V, 1MHz | 3 µs | 15 µA @ 100 V | 200 V | 3A | -55°C ~ 175°C | 1.15 V @ 10 A |
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