Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N1200AR

1N1200AR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
2,831 -

RFQ

1N1200AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1202A

1N1202A

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
3,672 -

RFQ

1N1202A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1204A

1N1204A

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
2,285 -

RFQ

1N1204A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N1204AR

1N1204AR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor
2,374 -

RFQ

1N1204AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 200°C 1.1 V @ 12 A
1N3671A

1N3671A

DIODE GEN PURP 800V 12A DO4

GeneSiC Semiconductor
2,537 -

RFQ

1N3671A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 200°C 1.1 V @ 12 A
S12BR

S12BR

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
2,835 -

RFQ

S12BR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12D

S12D

DIODE GEN PURP 200V 12A DO4

GeneSiC Semiconductor
3,039 -

RFQ

S12D

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12DR

S12DR

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor
2,220 -

RFQ

S12DR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12G

S12G

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
2,822 -

RFQ

S12G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12GR

S12GR

DIODE GEN PURP REV 400V 12A DO4

GeneSiC Semiconductor
3,640 -

RFQ

S12GR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12J

S12J

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
3,758 -

RFQ

S12J

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12JR

S12JR

DIODE GEN PURP REV 600V 12A DO4

GeneSiC Semiconductor
2,643 -

RFQ

S12JR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12K

S12K

DIODE GEN PURP 800V 12A DO4

GeneSiC Semiconductor
2,390 -

RFQ

S12K

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12KR

S12KR

DIODE GEN PURP REV 800V 12A DO4

GeneSiC Semiconductor
3,622 -

RFQ

S12KR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12M

S12M

DIODE GEN PURP 1000V 12A DO4

GeneSiC Semiconductor
3,318 -

RFQ

S12M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12MR

S12MR

DIODE GEN PURP REV 1KV 12A DO4

GeneSiC Semiconductor
3,677 -

RFQ

S12MR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12Q

S12Q

DIODE GEN PURP 1200V 12A DO4

GeneSiC Semiconductor
3,134 -

RFQ

S12Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
S12QR

S12QR

DIODE GEN PURP REV 1.2KV 12A DO4

GeneSiC Semiconductor
2,452 -

RFQ

S12QR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 12A -65°C ~ 175°C 1.1 V @ 12 A
1N3890R

1N3890R

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
3,415 -

RFQ

1N3890R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 100 V 12A -65°C ~ 150°C 1.4 V @ 12 A
1N3891R

1N3891R

DIODE GEN PURP REV 200V 12A DO4

GeneSiC Semiconductor
2,144 -

RFQ

1N3891R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 200 V 12A -65°C ~ 150°C 1.4 V @ 12 A
Total 789 Record«Prev1... 2122232425262728...40Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário