Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S16DR

S16DR

DIODE GEN PURP 200V 16A DO220AA

GeneSiC Semiconductor
2,527 -

RFQ

S16DR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16G

S16G

DIODE GEN PURP 400V 16A DO203AA

GeneSiC Semiconductor
3,416 -

RFQ

S16G

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 16A -65°C ~ 175°C 1.1 V @ 16 A
FR30K05

FR30K05

DIODE GEN PURP 800V 30A DO5

GeneSiC Semiconductor
3,490 -

RFQ

FR30K05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 800 V 30A -40°C ~ 125°C 1 V @ 30 A
S16GR

S16GR

DIODE GEN PURP 400V 16A DO220AA

GeneSiC Semiconductor
2,219 -

RFQ

S16GR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 400 V 16A -65°C ~ 175°C 1.1 V @ 16 A
FR30M05

FR30M05

DIODE GEN PURP 1KV 30A DO5

GeneSiC Semiconductor
2,134 -

RFQ

FR30M05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 1000 V 30A -40°C ~ 125°C 1 V @ 30 A
S16J

S16J

DIODE GEN PURP 600V 16A DO203AA

GeneSiC Semiconductor
3,677 -

RFQ

S16J

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16JR

S16JR

DIODE GEN PURP 600V 16A DO220AA

GeneSiC Semiconductor
2,082 -

RFQ

S16JR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16K

S16K

DIODE GEN PURP 800V 16A DO203AA

GeneSiC Semiconductor
2,412 -

RFQ

S16K

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 16A -65°C ~ 175°C 1.1 V @ 16 A
1N3210

1N3210

DIODE GEN PURP 200V 15A DO5

GeneSiC Semiconductor
2,023 -

RFQ

1N3210

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 50 V 200 V 15A -65°C ~ 175°C 1.5 V @ 15 A
S16KR

S16KR

DIODE GEN PURP 800V 16A DO220AA

GeneSiC Semiconductor
3,632 -

RFQ

S16KR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 800 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16M

S16M

DIODE GEN PURP 1KV 16A DO203AA

GeneSiC Semiconductor
3,643 -

RFQ

S16M

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16MR

S16MR

DIODE GEN PURP 1KV 16A DO220AA

GeneSiC Semiconductor
3,285 -

RFQ

S16MR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1000 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16Q

S16Q

DIODE GEN PURP 1.2KV 16A DO203AA

GeneSiC Semiconductor
2,422 -

RFQ

S16Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S16QR

S16QR

DIODE GEN PURP 1.2KV 16A DO220AA

GeneSiC Semiconductor
2,652 -

RFQ

S16QR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 1200 V 16A -65°C ~ 175°C 1.1 V @ 16 A
S40Q

S40Q

DIODE GEN PURP 1.2KV 40A DO5

GeneSiC Semiconductor
2,463 -

RFQ

S40Q

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 100 V 1200 V 40A -65°C ~ 190°C 1.1 V @ 40 A
GC20MPS12-220

GC20MPS12-220

SIC DIODE 1200V 20A TO-220-2

GeneSiC Semiconductor
340 -

RFQ

GC20MPS12-220

Ficha técnica

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1298pF @ 1V, 1MHz 0 ns 18 µA @ 1200 V 1200 V 94A (DC) -55°C ~ 175°C 1.8 V @ 20 A
1N1184A

1N1184A

DIODE GEN PURP 100V 40A DO5

GeneSiC Semiconductor
3,808 -

RFQ

1N1184A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 100 V 40A -65°C ~ 200°C 1.1 V @ 40 A
1N3214

1N3214

DIODE GEN PURP 600V 15A DO5

GeneSiC Semiconductor
2,353 -

RFQ

1N3214

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 µA @ 50 V 600 V 15A -65°C ~ 175°C 1.5 V @ 15 A
1N2131AR

1N2131AR

DIODE GEN PURP REV 200V 60A DO5

GeneSiC Semiconductor
2,442 -

RFQ

1N2131AR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 50 V 200 V 60A -65°C ~ 200°C 1.1 V @ 60 A
S85YR

S85YR

DIODE GEN PURP REV 1.6KV 85A DO5

GeneSiC Semiconductor
3,249 -

RFQ

S85YR

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 10 µA @ 100 V 1600 V 85A -65°C ~ 150°C 1.1 V @ 85 A
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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