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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
FR20J02 DIODE GEN PURP 600V 20A DO5 GeneSiC Semiconductor	2,325	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	250 ns	25 µA @ 50 V	600 V	20A	-40°C ~ 125°C	1 V @ 20 A
S300Z DIODE GEN PURP 2KV 300A DO205 GeneSiC Semiconductor	2,995	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 1600 V	2000 V	300A	-60°C ~ 180°C	1.2 V @ 300 A
GB02SLT12-214 DIODE SCHOTTKY 1.2KV 2A DO214AA GeneSiC Semiconductor	7,787	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	131pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	2A (DC)	-55°C ~ 175°C	1.8 V @ 1 A
GAP3SLT33-214 DIODE SCHOTTKY 3.3KV 300MA DO214 GeneSiC Semiconductor	5,300	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	42pF @ 1V, 1MHz	0 ns	10 µA @ 3300 V	3300 V	300mA (DC)	-55°C ~ 175°C	2.2 V @ 300 mA
GB05MPS33-263 SIC SCHOTTKY 3300V 5A TO-263-7 GeneSiC Semiconductor	3,232	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	288pF @ 1V, 1MHz	0 ns	10 µA @ 3000 V	3300 V	14A (DC)	-55°C ~ 175°C	3 V @ 5 A
GC50MPS33H 3300V 50A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	3,550	-	RFQ		Tube	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	-	0 ns	-	3300 V	50A (DC)	175°C	-
GB01SLT06-214 DIODE SCHOTTKY 650V 1A DO214AA GeneSiC Semiconductor	16,547	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	SiC Schottky MPS™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	76pF @ 1V, 1MHz	0 ns	10 µA @ 6.5 V	650 V	1A (DC)	-55°C ~ 175°C	2 V @ 1 A
1N4596 DIODE GEN PURP 1.4KV 150A DO205 GeneSiC Semiconductor	2,099	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	3.5 mA @ 1400 V	1400 V	150A	-60°C ~ 200°C	1.5 V @ 150 A
1N4596R DIODE GEN PURP REV 1.4KV DO205AA GeneSiC Semiconductor	3,430	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	3.5 mA @ 1400 V	1400 V	150A	-60°C ~ 200°C	1.5 V @ 150 A
1N3879R DIODE GEN PURP REV 50V 6A DO4 GeneSiC Semiconductor	981	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	15 µA @ 50 V	50 V	6A	-65°C ~ 150°C	1.4 V @ 6 A
1N3879 DIODE GEN PURP 50V 6A DO4 GeneSiC Semiconductor	818	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	15 µA @ 50 V	50 V	6A	-65°C ~ 150°C	1.4 V @ 6 A
1N3892 DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor	652	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	400 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
1N3881R DIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor	635	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	15 µA @ 50 V	200 V	6A	-65°C ~ 150°C	1.4 V @ 6 A
1N3892R DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor	494	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	400 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
1N3883R DIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor	298	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	15 µA @ 50 V	400 V	6A	-65°C ~ 150°C	1.4 V @ 6 A
S320JR DIODE GEN PURP 600V 320A DO9 GeneSiC Semiconductor	3,708	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 600 V	600 V	320A	-60°C ~ 180°C	1.2 V @ 300 A
S320KR DIODE GEN PURP 800V 320A DO9 GeneSiC Semiconductor	2,804	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 600 V	800 V	320A	-60°C ~ 180°C	1.2 V @ 300 A
S320MR DIODE GEN PURP REV 1KV DO205AB GeneSiC Semiconductor	3,910	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 600 V	1000 V	320A	-60°C ~ 180°C	1.2 V @ 300 A
S320QR DIODE GEN PURP REV 1.2KV DO205AB GeneSiC Semiconductor	3,049	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 600 V	1200 V	320A	-60°C ~ 180°C	1.2 V @ 300 A
1N3889R DIODE GEN PURP REV 50V 12A DO4 GeneSiC Semiconductor	176	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	50 V	12A	-65°C ~ 150°C	1.4 V @ 12 A