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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RGL34JHE3/83DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,038 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
GL41D-E3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,125 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SB2K-M3/52TDIODE GEN PURP 800V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,512 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 2A (DC) | -55°C ~ 150°C | 1.15 V @ 2 A | |
|
FR207GP-TPDIODE GPP GAST 2A DO-15 Micro Commercial Co |
2,182 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 500 ns | - | 1000 V | 2A | -55°C ~ 150°C | - | |
|
SS24F-HFDIODE SCHOTTKY 2A 40V SMAF Comchip Technology |
3,377 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 160pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A | |
|
B120BQ-13-FDIODE SCHOTTKY 20V 1A SMB Diodes Incorporated |
2,339 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 500 mV @ 1 A |
|
|
RGL34AHE3/98DIODE GEN PURP 50V 500MA DO213AA Vishay General Semiconductor - Diodes Division |
3,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
FR504GP-APDIODE GPP FAST 5A DO-201AD Micro Commercial Co |
3,929 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 150 ns | - | 400 V | 5A | -55°C ~ 150°C | - | |
|
FR155G A0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,808 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RL253M-TPDIODE GPP 2.5A DO-15 Micro Commercial Co |
3,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | - | - | 200 V | 2.5A | -55°C ~ 150°C | - | |
|
SS39 V6GDIODE SCHOTTKY 3A 90V DO-214AB Taiwan Semiconductor Corporation |
2,850 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | - | |
|
SFT15GHA1GDIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation |
2,487 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
DSB0.2A30SCHOTTKY DIODE Microchip Technology |
3,886 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 60pF @ 0V, 1MHz | - | 10 µA @ 30 V | 30 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
|
FR505GP-APDIODE GPP FAST 5A DO-201AD Micro Commercial Co |
3,966 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 250 ns | - | 600 V | 5A | -55°C ~ 150°C | - | |
|
|
FR155GHA0GDIODE GEN PURP 600V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,174 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
|
RL254M-TPDIODE GPP 2.5A DO-15 Micro Commercial Co |
2,970 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 35pF @ 4V, 1MHz | - | - | 400 V | 2.5A | -55°C ~ 150°C | - | |
|
|
SFT16G A1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
2,328 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
JAN1N7039CCU1RECTIFIER Microchip Technology |
2,730 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
FR506GP-APDIODE GPP FAST 5A DO-201AD Micro Commercial Co |
2,669 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 500 ns | - | 800 V | 5A | -55°C ~ 150°C | - | |
|
|
FR156G A0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,151 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
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