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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SFF507G C0GDIODE GEN PURP 500V 5A ITO220AB Taiwan Semiconductor Corporation |
3,723 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.7 V @ 2.5 A | |
|
FR602-TPDIODE GPP FAST 6A R-6 Micro Commercial Co |
3,297 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 150pF @ 4V, 1MHz | 150 ns | - | 100 V | 6A | -55°C ~ 150°C | - | |
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UF4005GP-APDIODE GPP ULT FAST 1A DO-41 Micro Commercial Co |
3,319 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | - | 600 V | 1A | -55°C ~ 150°C | - | |
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VS-S1573DIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,703 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
RA252-BPDIODE Micro Commercial Co |
3,557 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 300pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 25A | -50°C ~ 150°C | 1.1 V @ 25 A | ||
|
|
VSSAF512HM3/HDIODE SCHOTTKY 120V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,523 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 360pF @ 4V, 1MHz | - | 400 µA @ 120 V | 120 V | 5A | -40°C ~ 150°C | 880 mV @ 5 A |
|
CFRM107-HFDIODE GEN PURP 1KV 1A MINISMA Comchip Technology |
2,103 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
CMR1-04 BK PBFREEDIODE GEN PURP 400V 1A SMB Central Semiconductor Corp |
2,946 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
V2FM12HM3/I2A,120V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,421 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 65 µA @ 120 V | 120 V | 2A | -40°C ~ 175°C | 960 mV @ 2 A |
|
EGL34A-E3/83DIODE GEN PURP 50V 500MA DO213AA Vishay General Semiconductor - Diodes Division |
3,268 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
|
CDBFR0520L-HFDIODE SCHOTTKY 20V 500MA 1005 Comchip Technology |
3,077 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Last Time Buy | Surface Mount | 170pF @ 0V, 1MHz | 22 ns | 250 µA @ 20 V | 20 V | 500mA | 125°C | 385 mV @ 500 mA | |
|
|
VSSAF512HM3/IDIODE SCHOTTKY 120V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 360pF @ 4V, 1MHz | - | 400 µA @ 120 V | 120 V | 5A | -40°C ~ 150°C | 880 mV @ 5 A |
|
|
EM 1V0DIODE GEN PURP 400V 1A AXIAL Sanken |
2,668 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
|
AS01VDIODE GEN PURP 400V 600MA AXIAL Sanken |
2,600 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 600mA | -40°C ~ 150°C | 1.5 V @ 600 mA | |
|
|
V2FL45HM3/I2A,45V,SMF,TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division |
2,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 270pF @ 4V, 1MHz | - | 570 µA @ 45 V | 45 V | 2A | -40°C ~ 150°C | 560 mV @ 2 A |
|
|
EGL34B-E3/83DIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,180 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
S1KLS RVGDIODE GEN PURP 800V 1.2A SOD123 Taiwan Semiconductor Corporation |
2,912 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 800 V | 800 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |
|
|
VSSAF515HM3/HDIODE SCHOTTKY 150V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,019 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 5A | -40°C ~ 150°C | 1.1 V @ 5 A |
|
|
RM 1ZVDIODE GEN PURP 200V 1A AXIAL Sanken |
2,362 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 950 mV @ 1 A | |
|
|
AS01V0DIODE GEN PURP 400V 600MA AXIAL Sanken |
2,751 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 600mA | -40°C ~ 150°C | 1.5 V @ 600 mA |
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